FastIRFET™
IRF7171MTRPbF
DirectFET® Power MOSFET
Typical values (unless otherwise specified)
Applications and Benefits
Ideal for High Performance Isolated Converter
Primary Switch
Optimized for Synchronous Rectification
RoHS Compliant, Halogen Free
Lead-Free (Qualified up to 260°C Reflow)
Low Conduction Losses
VDSS
100V min
VGS
±20V max
Qgd
RDS(on)
5.3m@ 10V
Vgs(th)
Qg tot
36nC
13nC
2.9V
High Cdv/dt Immunity
Low Profile (<0.7mm)
S
D
S
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
Industrial Qualified
G
D
DirectFET™ ISOMETRIC
Applicable DirectFET® Outline and Substrate Outline
MN
MN
Description
The IRF7171MTRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging
to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor
phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing meth-
ods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in power systems.
The IRF7171MTRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses
in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for
system reliability improvements, and makes this device ideal for high performance power converters.
Ordering Information
Base part number
Package Type
Standard Pack
Orderable Part Number
Form
Tape and Reel
Quantity
4800
IRF7171MTRPbF
DirectFET® Medium Can
IRF7171MTRPbF
Absolute Maximum Ratings
Parameter
Max.
±20
93
Units
V
VGS
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
59
15
330
86
A
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current
IDM
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
56
18.0
15.0
12.0
9.0
40
I
= 56A
D
V
= 6V
GS
VGS = 7V
VGS = 8V
VGS = 10V
VGS = 12V
30
20
10
0
T
= 125°C
J
T
= 25°C
J
6.0
3.0
0
25
50
75
100 125 150 175 200
4
6
8
10
12
14
16
18
20
I
, Drain Current (A)
V
Gate -to -Source Voltage (V)
D
GS,
Fig 2. Typical On-Resistance vs. Drain Current
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET® Website.
Surface mounted on 1 in. square Cu board, steady state.
Starting TJ = 25°C, L = 55µH, RG = 50, IAS = 56A.
1
www.irf.com
© 2015 International Rectifier
Submit Datasheet Feedback
March 25, 2015