Datasheet > IRF646

IRF646

更新时间： 2024-11-23 22:51:35

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
7页	64K
描述
14A, 275V, 0.280 Ohm, N-Channel Power MOSFET

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IRF646 数据手册

IRF646

Data Sheet

June 1999

File Number 2169.3

14A, 275V, 0.280 Ohm, N-Channel Power

MOSFET

Features

• 14A, 275V

This N-Channel enhancement mode silicon gate power ﬁeld

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a speciﬁed level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching convertors, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

• r

= 0.280Ω

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• 275VDC Rating-120VAC Line System Operation

• Related Literature

Formerly developmental type TA17423.

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRF646

Symbol

IRF646

TO-220AB

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

4-214

12 3 4 5 6 7

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