Datasheet > IRF1404

IRF1404

更新时间： 2024-09-15 12:23:47

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
9页	404K
描述
HEXFET Power MOSFET

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IRF1404 数据手册

IRF1404

HEXFET^®Power MOSFET

^lAdvanced Process Technology

^lUltra Low On-Resistance

^lDynamic dv/dt Rating

^l175°C Operating Temperature

^lFast Switching

V_DSS= 40V

R_DS(on)= 0.004Ω

^lFully Avalanche Rated

^lAutomotive Qualified (Q101)

I_D= 202A

Description

Seventh Generation HEXFET^®Power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per

silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that

HEXFET power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable

device for use in a wide variety of applications including

automotive.

The TO-220 package is universally preferred for all

automotive-commercial-industrialapplicationsatpower

dissipation levels to approximately 50 watts. The low

thermal resistance and low package cost of the TO-220

contributetoitswideacceptancethroughouttheindustry.

Absolute Maximum Ratings

TO-220AB

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

202

143

808

P_D@T_C= 25°C

Power Dissipation

333

W/°C

Linear Derating Factor

2.2

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

620

Single Pulse Avalanche Energy

Avalanche Current

See Fig.12a, 12b, 15, 16

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

1.5

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

-55 to + 175

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

Units

R_θJC

R_θCS

R_θJA

0.45

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

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