IRF1404S

更新时间： 2024-02-15 12:55:09

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	306K
描述
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A)

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中文翻译

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数据手册
替代型号

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IRF1404S 数据手册

PD-93853C

IRF1404S

IRF1404L

HEXFET^®Power MOSFET

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

V_DSS= 40V

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

R_DS(on)= 0.004Ω

I_D= 162A

Description

Seventh Generation HEXFET^®Power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per

silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that

HEXFET power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable

device for use in a wide variety of applications.

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D²Pak is suitable for high current applications because of

its low internal connection resistance and can dissipate up

to 2.0W in a typical surface mount application.

The through-hole version (IRF1404L) is available for low-

profile applications.

D²Pak

IRF1404S

TO-262

IRF1404L

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

162

115

650

3.8

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

200

1.3

Linear Derating Factor

W/°C

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

519

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

5.0

-55 to +175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Typ.

–––

Max.

0.75

Units

°C/W

R_θJC

R_θJA

Junction-to-Case

Junction-to-Ambient (PCB mounted, steady-state)*

–––

www.irf.com

5/18/01

12 3 4 5 6 7...10

中文翻译

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IRF1404S 替代型号

型号	品牌	替代类型	描述	数据表
AUIRF1404S	INFINEON	类似代替	Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Met
AUIRF1404STRL	INFINEON	类似代替	暂无描述
IRF1404SPBF	INFINEON	功能相似	HEXFET® Power MOSFET

与IRF1404S相关器件

型号	品牌	获取价格	描述	数据表
IRF1404SPBF	KERSEMI	获取价格	HEXFETÂ® Power MOSFET
IRF1404SPBF	INFINEON	获取价格	HEXFET® Power MOSFET
IRF1404STRL	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Met
IRF1404STRLPBF	INFINEON	获取价格	Advanced Process Technology
IRF1404STRR	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Met
IRF1404STRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Met
IRF1404Z	INFINEON	获取价格	AUTOMOTIVE MOSFET
IRF1404Z (KRF1404Z)	KEXIN	获取价格	N-Channel MOSFET
IRF1404ZGPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Me
IRF1404ZL	INFINEON	获取价格	Advanced Process Technology

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