Datasheet > IRF1404SPBF

IRF1404SPBF

更新时间： 2024-11-06 12:05:11

品牌	Logo	应用领域
科盛美 - KERSEMI		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
10页	3891K
描述
HEXFETÂ® Power MOSFET

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数据手册

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IRF1404SPBF 数据手册

PD-95104

IRF1404SPbF

IRF1404LPbF

l Advanced Process Technology

l Ultra Low On-Resistance

^lDynamic dv/dt Rating

^l175°C Operating Temperature

l Fast Switching

HEXFET^®Power MOSFET

V_DSS= 40V

l Fully Avalanche Rated

l Lead-Free

R_DS(on)= 0.004Ω

I_D= 162A

Description

Seventh Generation HEXFET^®Power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per

silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that

HEXFET power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable

device for use in a wide variety of applications.

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D²Pak is suitable for high current applications because of

its low internal connection resistance and can dissipate up

to 2.0W in a typical surface mount application.

The through-hole version (IRF1404L) is available for low-

profile applications.

D²Pak

TO-262

IRF1404SPbF IRF1404LPbF

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

162

115

650

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

3.8

Power Dissipation

200

Linear Derating Factor

1.3

W/°C

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

Single Pulse Avalanche Energy

Avalanche Current

519

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

5.0

-55 to +175

300 (1.6mm from case )

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

Thermal Resistance

Parameter

Junction-to-Case

Junction-to-Ambient (PCB mounted, steady-state)*

Typ.

–––

Max.

0.75

Units

°C/W

R_θJC

R_θJA

www.kersemi.com

03/11/04

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