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IRF1404S

更新时间: 2024-09-13 12:05:11
品牌 Logo 应用领域
科盛美 - KERSEMI /
页数 文件大小 规格书
10页 3987K
描述
HEXFET® Power MOSFET

IRF1404S 数据手册

 浏览型号IRF1404S的Datasheet PDF文件第2页浏览型号IRF1404S的Datasheet PDF文件第3页浏览型号IRF1404S的Datasheet PDF文件第4页浏览型号IRF1404S的Datasheet PDF文件第5页浏览型号IRF1404S的Datasheet PDF文件第6页浏览型号IRF1404S的Datasheet PDF文件第7页 
PD-93853C  
IRF1404S  
IRF1404L  
HEXFET® Power MOSFET  
l Advanced Process Technology  
l Ultra Low On-Resistance  
l Dynamic dv/dt Rating  
D
VDSS = 40V  
l 175°C Operating Temperature  
l Fast Switching  
l Fully Avalanche Rated  
RDS(on) = 0.004Ω  
G
ID = 162A†  
Description  
Seventh Generation HEXFET® Power MOSFETs from  
S
International Rectifier utilize advanced processing  
techniques to achieve extremely low on-resistance per  
silicon area. This benefit, combined with the fast  
switching speed and ruggedized device design that  
HEXFET power MOSFETs are well known for, provides  
the designer with an extremely efficient and reliable  
device for use in a wide variety of applications.  
The D2Pak is a surface mount power package capable of  
accommodating die sizes up to HEX-4. It provides the  
highest power capability and the lowest possible on-  
resistance in any existing surface mount package. The  
D2Pak is suitable for high current applications because of  
its low internal connection resistance and can dissipate up  
to 2.0W in a typical surface mount application.  
The through-hole version (IRF1404L) is available for low-  
profile applications.  
D2Pak  
IRF1404S  
TO-262  
IRF1404L  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V‡  
Continuous Drain Current, VGS @ 10V‡  
Pulsed Drain Current ‡  
162†  
115†  
650  
A
PD @TA = 25°C  
PD @TC = 25°C  
Power Dissipation  
3.8  
W
W
Power Dissipation  
200  
Linear Derating Factor  
1.3  
W/°C  
V
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
± 20  
Single Pulse Avalanche Energy‡  
Avalanche Current  
519  
mJ  
A
95  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒ‡  
Operating Junction and  
20  
mJ  
V/ns  
5.0  
-55 to +175  
-55 to +175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.75  
40  
Units  
°C/W  
RθJC  
RθJA  
Junction-to-Case  
Junction-to-Ambient (PCB mounted, steady-state)*  
–––  
www.kersemi.com  
1
5/18/01  

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