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IRF1404PBF

更新时间: 2024-09-15 12:33:43
品牌 Logo 应用领域
科盛美 - KERSEMI 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
9页 3452K
描述
Advanced Process Technology

IRF1404PBF 数据手册

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IRF1404PbF  
HEXFET® Power MOSFET  
l Advanced Process Technology  
l Ultra Low On-Resistance  
l Dynamic dv/dt Rating  
l 175°C Operating Temperature  
l Fast Switching  
l Fully Avalanche Rated  
l Automotive Qualified (Q101)  
l Lead-Free  
D
VDSS = 40V  
RDS(on) = 0.004Ω  
G
ID = 202A†  
S
Description  
Seventh Generation HEXFET® Power MOSFETs from  
International Rectifier utilize advanced processing  
techniques to achieve extremely low on-resistance per  
silicon area. This benefit, combined with the fast  
switching speed and ruggedized device design that  
HEXFET power MOSFETs are well known for, provides  
the designer with an extremely efficient and reliable  
device for use in a wide variety of applications including  
automotive.  
The TO-220 package is universally preferred for all  
automotive-commercial-industrialapplicationsatpower  
dissipation levels to approximately 50 watts. The low  
thermal resistance and low package cost of the TO-220  
contributetoitswideacceptancethroughouttheindustry.  
Absolute Maximum Ratings  
TO-220AB  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
202†  
143†  
A
808  
PD @TC = 25°C  
Power Dissipation  
333  
W
W/°C  
V
Linear Derating Factor  
2.2  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
± 20  
620  
Single Pulse Avalanche Energy‚  
Avalanche Current  
mJ  
A
See Fig.12a, 12b, 15, 16  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy‡  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
mJ  
V/ns  
1.5  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
-55 to + 175  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
Units  
RθJC  
RθCS  
RθJA  
0.45  
–––  
62  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.50  
–––  
°C/W  
1
www.kersemi.com  

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