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IRF1010EZPBF_15 PDF预览

IRF1010EZPBF_15

更新时间: 2024-11-19 01:17:07
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英飞凌 - INFINEON /
页数 文件大小 规格书
12页 413K
描述
Advanced Process Technology

IRF1010EZPBF_15 数据手册

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PD - 95483C  
IRF1010EZPbF  
IRF1010EZSPbF  
IRF1010EZLPbF  
HEXFET® Power MOSFET  
Features  
Advanced Process Technology  
Ultra Low On-Resistance  
Dynamic dv/dt Rating  
D
VDSS = 60V  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free  
RDS(on) = 8.5mΩ  
G
ID = 75A  
Description  
S
ThisHEXFET® PowerMOSFETutilizesthelatest  
processing techniques to achieve extremely low  
on-resistancepersiliconarea. Additionalfeatures  
of this design are a 175°C junction operating  
temperature, fast switching speed and improved  
repetitive avalanche rating.These features  
combinetomakethisdesignanextremelyefficient  
and reliable device for use in a wide variety of  
applications.  
D2Pak  
TO-262  
TO-220AB  
IRF1010EZPbF  
IRF1010EZSPbF IRF1010EZLPbF  
Absolute Maximum Ratings  
Parameter  
Max.  
84  
Units  
A
I
I
I
I
@ TC = 25°C  
@ TC = 100°C  
@ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
D
D
D
60  
Continuous Drain Current, VGS @ 10V (See Fig. 9)  
75  
(Package Limited)  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
340  
140  
DM  
P
@TC = 25°C  
W
Maximum Power Dissipation  
Linear Derating Factor  
D
0.90  
± 20  
W/°C  
V
V
Gate-to-Source Voltage  
GS  
EAS  
99  
180  
mJ  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
EAS (tested)  
IAR  
See Fig.12a,12b,15,16  
A
EAR  
mJ  
°C  
Repetitive Avalanche Energy  
T
J
-55 to + 175  
Operating Junction and  
T
Storage Temperature Range  
STG  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 screw  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
1.11  
–––  
62  
Units  
°C/W  
Rθ  
JC  
CS  
JA  
JA  
Junction-to-Case  
Rθ  
Rθ  
Rθ  
0.50  
–––  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
–––  
40  
Junction-to-Ambient (PCB Mount, steady state)  
HEXFET® is a registered trademark of International Rectifier.  
www.irf.com  
1
07/06/10  

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