Datasheet > IRF1010ESTRR

IRF1010ESTRR

更新时间： 2024-10-30 21:11:03

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
11页	123K
描述
Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3

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IRF1010ESTRR 数据手册

PD - 91720

IRF1010ES

IRF1010EL

l Advanced Process Technology

l Surface Mount (IRF1010ES)

l Low-profile through-hole (IRF1010EL)

l 175°C Operating Temperature

l Fast Switching

HEXFET^®Power MOSFET

V_DSS= 60V

l Fully Avalanche Rated

_DS(on)= 12mΩ

Description

AdvancedHEXFET^®PowerMOSFETsfromInternational

Rectifier utilize advanced processing techniques to

achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and

ruggedizeddevicedesignthatHEXFETpowerMOSFETs

are well known for, provides the designer with an

extremely efficient and reliable device for use in a wide

variety of applications.

I_D= 84A

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D²Pakissuitableforhighcurrentapplicationsbecauseofits

low internal connection resistance and can dissipate up to

2.0W in a typical surface mount application.

D²Pak

IRF1010ES

TO-262

IRF1010EL

The through-hole version (IRF1010EL) is available for low-

profile applications.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

330

P_D@T_C= 25°C

Power Dissipation

200

W/°C

Linear Derating Factor

1.4

V_GS

I_AR

Gate-to-Source Voltage

± 20

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

4.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

0.75

Units

R_θJC

R_θJA

°C/W

Junction-to-Ambient (PCB mount)**

–––

www.irf.com

02/14/02

12 3 4 5 6 7...11

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