是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.45 |
雪崩能效等级(Eas): | 210 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 80 V | 最大漏极电流 (Abs) (ID): | 80 A |
最大漏极电流 (ID): | 80 A | 最大漏源导通电阻: | 0.0057 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 150 W |
最大脉冲漏极电流 (IDM): | 320 A | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPP057N08N3GXKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Me | |
IPP05CN10LG | INFINEON |
获取价格 |
OptiMOS2 Power-Transistor | |
IPP05CN10N | INFINEON |
获取价格 |
OptiMOS㈢2 Power-Transistor | |
IPP05CN10NG | INFINEON |
获取价格 |
OptiMOS㈢2 Power-Transistor | |
IPP05CN10NGXKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 100A I(D), 100V, 0.0054ohm, 1-Element, N-Channel, Silicon, | |
IPP05N03L | INFINEON |
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OptiMOS Buck converter series | |
IPP05N03LA | INFINEON |
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OptiMOS 2 Power-Transistor | |
IPP05N03LB | INFINEON |
获取价格 |
OptiMOS㈢2 Power-Transistor | |
IPP05N03LBG | INFINEON |
获取价格 |
OptiMOS㈢2 Power-Transistor | |
IPP05N03LBG_08 | INFINEON |
获取价格 |
OptiMOS2 Power-Transistor |