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IPP065N03LG PDF预览

IPP065N03LG

更新时间: 2024-11-18 11:08:51
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 347K
描述
OptiMOS?3 Power-Transistor

IPP065N03LG 数据手册

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IPP065N03L G  
IPB065N03L G  
OptiMOS3 Power-Transistor  
Product Summary  
Features  
V DS  
30  
6.5  
50  
V
• Fast switching MOSFET for SMPS  
• Optimized technology for DC/DC converters  
• Qualified according to JEDEC1) for target applications  
R DS(on),max  
I D  
m  
A
• N-channel, logic level  
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
• Avalanche rated  
• Pb-free plating; RoHS compliant  
• Halogen-free according to IEC61249-2-21  
Type  
IPP065N03L G  
IPB065N03L G  
Package  
Marking  
PG-TO220-3-1  
065N03L  
PG-TO263-3  
065N03L  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
V
V
GS=10 V, T C=25 °C  
Continuous drain current  
50  
50  
A
GS=10 V, T C=100 °C  
V
V
GS=4.5 V, T C=25 °C  
50  
42  
GS=4.5 V,  
T C=100 °C  
Pulsed drain current2)  
I D,pulse  
I AS  
T C=25 °C  
350  
50  
Avalanche current, single pulse3)  
T C=25 °C  
E AS  
I D=20 A, R GS=25 Ω  
Avalanche energy, single pulse  
60  
mJ  
I D=50 A, V DS=24 V,  
di /dt =200 A/µs,  
Reverse diode dv /dt  
dv /dt  
6
kV/µs  
V
T
j,max=175 °C  
V GS  
Gate source voltage  
1) J-STD20 and JESD22  
±20  
Rev. 2.0  
page 1  
2010-04-22  

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