5秒后页面跳转
IPP065N03LG PDF预览

IPP065N03LG

更新时间: 2024-11-05 11:08:51
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 347K
描述
OptiMOS?3 Power-Transistor

IPP065N03LG 数据手册

 浏览型号IPP065N03LG的Datasheet PDF文件第2页浏览型号IPP065N03LG的Datasheet PDF文件第3页浏览型号IPP065N03LG的Datasheet PDF文件第4页浏览型号IPP065N03LG的Datasheet PDF文件第5页浏览型号IPP065N03LG的Datasheet PDF文件第6页浏览型号IPP065N03LG的Datasheet PDF文件第7页 
IPP065N03L G  
IPB065N03L G  
OptiMOS3 Power-Transistor  
Product Summary  
Features  
V DS  
30  
6.5  
50  
V
• Fast switching MOSFET for SMPS  
• Optimized technology for DC/DC converters  
• Qualified according to JEDEC1) for target applications  
R DS(on),max  
I D  
m  
A
• N-channel, logic level  
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
• Avalanche rated  
• Pb-free plating; RoHS compliant  
• Halogen-free according to IEC61249-2-21  
Type  
IPP065N03L G  
IPB065N03L G  
Package  
Marking  
PG-TO220-3-1  
065N03L  
PG-TO263-3  
065N03L  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
V
V
GS=10 V, T C=25 °C  
Continuous drain current  
50  
50  
A
GS=10 V, T C=100 °C  
V
V
GS=4.5 V, T C=25 °C  
50  
42  
GS=4.5 V,  
T C=100 °C  
Pulsed drain current2)  
I D,pulse  
I AS  
T C=25 °C  
350  
50  
Avalanche current, single pulse3)  
T C=25 °C  
E AS  
I D=20 A, R GS=25 Ω  
Avalanche energy, single pulse  
60  
mJ  
I D=50 A, V DS=24 V,  
di /dt =200 A/µs,  
Reverse diode dv /dt  
dv /dt  
6
kV/µs  
V
T
j,max=175 °C  
V GS  
Gate source voltage  
1) J-STD20 and JESD22  
±20  
Rev. 2.0  
page 1  
2010-04-22  

IPP065N03LG 替代型号

型号 品牌 替代类型 描述 数据表
IRL3103PBF INFINEON

功能相似

Advanced Process Technology
IRLB8721PBF INFINEON

功能相似

HEXFET Power MOSFET
IRF3707ZSPBF INFINEON

功能相似

HEXFET Power MOSFET

与IPP065N03LG相关器件

型号 品牌 获取价格 描述 数据表
IPP065N03LGXKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 50A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Me
IPP065N04NG INFINEON

获取价格

OptiMOS3 Power-Transistor
IPP065N06LG INFINEON

获取价格

OptiMOS㈢ Power-Transistor
IPP065N06LGAKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 80A I(D), 60V, 0.0065ohm, 1-Element, N-Channel, Silicon, Me
IPP069N20NM6 INFINEON

获取价格

IPP069N20NM6 OptiMOS? 6 200 V?is setting the new technology standard. It addresses the nee
IPP06CN10LG INFINEON

获取价格

OptiMOS2 Power-Transistor
IPP06CN10N INFINEON

获取价格

OptiMOS㈢2 Power-Transistor
IPP06CN10NG INFINEON

获取价格

OptiMOS㈢2 Power-Transistor
IPP06CN10NGHKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 100A I(D), 100V, 0.0065ohm, 1-Element, N-Channel, Silicon,
IPP06CN10NGXKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 100A I(D), 100V, 0.0065ohm, 1-Element, N-Channel, Silicon,