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IPP06N03LA PDF预览

IPP06N03LA

更新时间: 2024-09-15 22:06:43
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
10页 348K
描述
OptiMOS 2 Power-Transistor

IPP06N03LA 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:8.51其他特性:LOGIC LEVEL COMPATIBLE
雪崩能效等级(Eas):225 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:25 V最大漏极电流 (Abs) (ID):91 A
最大漏极电流 (ID):50 A最大漏源导通电阻:0.0099 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):83 W
最大脉冲漏极电流 (IDM):350 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IPP06N03LA 数据手册

 浏览型号IPP06N03LA的Datasheet PDF文件第2页浏览型号IPP06N03LA的Datasheet PDF文件第3页浏览型号IPP06N03LA的Datasheet PDF文件第4页浏览型号IPP06N03LA的Datasheet PDF文件第5页浏览型号IPP06N03LA的Datasheet PDF文件第6页浏览型号IPP06N03LA的Datasheet PDF文件第7页 
IPB06N03LA  
IPI06N03LA, IPP06N03LA  
OptiMOS®2 Power-Transistor  
Product Summary  
Features  
V DS  
25  
5.9  
50  
V
• Ideal for high-frequency dc/dc converters  
• N-channel  
R DS(on),max (SMD version)  
m  
A
I D  
• Logic level  
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
P-TO263-3-2  
P-TO262-3-1  
P-TO220-3-1  
• Superior thermal resistance  
• 175 °C operating temperature  
• dv /dt rated  
Type  
Package  
Ordering Code Marking  
IPB06N03LA  
IPI06N03LA  
IPP06N03LA  
P-TO263-3-2  
P-TO262-3-1  
P-TO220-3-1  
Q67042-S4146  
Q67042-S4147  
Q67042-S4148  
06N03LA  
06N03LA  
06N03LA  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
T C=25 °C1)  
I D  
Continuous drain current  
50  
50  
A
T C=100 °C  
T C=25 °C2)  
I D,pulse  
Pulsed drain current  
350  
225  
E AS  
I D=45 A, R GS=25 Ω  
Avalanche energy, single pulse  
mJ  
I D=50 A, V DS=20 V,  
di /dt =200 A/µs,  
Reverse diode dv /dt  
dv /dt  
6
kV/µs  
T
j,max=175 °C  
Gate source voltage3)  
V GS  
±20  
83  
V
P tot  
T C=25 °C  
Power dissipation  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 175  
55/175/56  
Rev. 1.3  
page 1  
2003-12-18  

IPP06N03LA 替代型号

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