5秒后页面跳转
IPP07N03LBG PDF预览

IPP07N03LBG

更新时间: 2024-10-30 03:44:23
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 339K
描述
OptiMOS㈢2 Power-Transistor

IPP07N03LBG 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.81
其他特性:LOGIC LEVEL COMPATIBLE雪崩能效等级(Eas):164 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):50 A最大漏极电流 (ID):50 A
最大漏源导通电阻:0.0066 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):94 W最大脉冲漏极电流 (IDM):200 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:MATTE TIN
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IPP07N03LBG 数据手册

 浏览型号IPP07N03LBG的Datasheet PDF文件第2页浏览型号IPP07N03LBG的Datasheet PDF文件第3页浏览型号IPP07N03LBG的Datasheet PDF文件第4页浏览型号IPP07N03LBG的Datasheet PDF文件第5页浏览型号IPP07N03LBG的Datasheet PDF文件第6页浏览型号IPP07N03LBG的Datasheet PDF文件第7页 
IPP07N03LB G  
OptiMOS®2 Power-Transistor  
Product Summary  
Features  
V DS  
30  
6.6  
50  
V
• Ideal for high-frequency dc/dc converters  
• Qualified according to JEDEC1) for target application  
R DS(on),max  
I D  
m  
A
• N-channel - Logic level  
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
PG-TO220-3-1  
• Superior thermal resistance  
• 175 °C operating temperature  
• dv /dt rated  
• Pb-free lead plating; RoHS compliant  
Type  
Package  
Marking  
IPP07N03LB G  
PG-TO220-3-1  
07N03LB  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
T C=25 °C2)  
I D  
Continuous drain current  
50  
50  
A
T C=100 °C  
T C=25 °C3)  
I D,pulse  
Pulsed drain current  
200  
164  
E AS  
I D=50 A, R GS=25 Ω  
Avalanche energy, single pulse  
mJ  
I D=50 A, V DS=20 V,  
di /dt =200 A/µs,  
Reverse diode dv /dt  
dv /dt  
6
kV/µs  
T
j,max=175 °C  
Gate source voltage4)  
V GS  
±20  
94  
V
P tot  
T C=25 °C  
Power dissipation  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 175  
55/175/56  
1) J-STD20 and JESD22  
Rev. 0.93  
page 1  
2006-05-10  

与IPP07N03LBG相关器件

型号 品牌 获取价格 描述 数据表
IPP07N03LBG_08 INFINEON

获取价格

OptiMOS2 Power-Transistor
IPP080N03LG INFINEON

获取价格

OptiMOS?3 Power-Transistor
IPP080N06NG INFINEON

获取价格

OptiMOS㈢ Power-Transistor
IPP082N10NF2S INFINEON

获取价格

Infineon's StrongIRFET™ 2 power MOSFET 100 V
IPP083N10N5 INFINEON

获取价格

Infineon’s OptiMOS™ 5 industrial power MOSFET
IPP084N06L3G INFINEON

获取价格

OptiMosTM3 Power-Transistor
IPP085N06LG INFINEON

获取价格

OptiMOS㈢ Power-Transistor
IPP086N10N3 G INFINEON

获取价格

英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SM
IPP086N10N3G INFINEON

获取价格

OptiMOS?3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
IPP086N10N3GXKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 80A I(D), 100V, 0.0086ohm, 1-Element, N-Channel, Silicon, M