Datasheet > IPP086N10N3 G

IPP086N10N3 G

更新时间： 2024-10-31 11:11:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	778K
描述
英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比，该系列在 R Ds（on）和 FOM（品质因数）方面均降低了30％。

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IPP086N10N3 G 数据手册

IPP086N10N3 G

IPI086N10N3 G

IPB083N10N3 G IPD082N10N3 G

OptiMOS^™3 Power-Transistor

Product Summary

Features

V_DS

100

8.2

• N-channel, normal level

R_{DS(on),max (TO 252)}

I_D

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC¹⁾for target application

• Ideal for high-frequency switching and synchronous rectification

• Halogen-free according to IEC61249-2-21

Type

IPP086N10N3 G

IPI086N10N3 G

IPB083N10N3 G

IPD082N10N3 G

Package

Marking

PG-TO220-3

086N10N

PG-TO262-3

086N10N

PG-TO263-3

083N10N

PG-TO252-3

082N10N

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

T _C=25 °C²⁾

I _D

Continuous drain current

T _C=100 °C

Pulsed drain current²⁾

I _D,pulse

E _AS

T _C=25 °C

320

I _D=73 A, R _GS=25 W

Avalanche energy, single pulse

Gate source voltage

110

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

125

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 175

55/175/56

¹⁾J-STD20 and JESD22

²⁾See figure 3

Rev. 2.6

page 1

2013-07-09

12 3 4 5 6 7...12

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