Datasheet > IPP082N10NF2S

IPP082N10NF2S

更新时间： 2024-09-14 11:16:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	1068K
描述
Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 8.2 mOhm, addressing a broad range of applications from low- to high-switching frequency. Compared to the previous technology the IPP082N10NF2S achieves 40 percent lower RDS(on) and over 50 percent Qg improvement.

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IPP082N10NF2S 数据手册

IPP082N10NF2S

MOSFET

StrongIRFET^TMꢀ2ꢀPower-Transistor

PG-TO220-3

tab

Features

•ꢀOptimizedꢀforꢀaꢀwideꢀrangeꢀofꢀapplications

•ꢀN-Channel,ꢀnormalꢀlevel

•ꢀ100%ꢀavalancheꢀtested

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant

•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21

Productꢀvalidation

QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard

Drain

Pin 2, Tab

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

Value

100

8.2

Unit

Gate

Pin 1

V_DS

R_DS(on),max

I_D

mΩ

Source

Pin 3

Q_oss

Q_G

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

IPP082N10NF2S

PG-TO220-3

082N10NS

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-06-14

12 3 4 5 6 7...11

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