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IPP070N06LG PDF预览

IPP070N06LG

更新时间: 2024-11-18 03:44:23
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
10页 445K
描述
OptiMOS㈢ Power-Transistor

IPP070N06LG 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:GREEN, PLASTIC, TO-220, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.81
Is Samacsys:N其他特性:AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
雪崩能效等级(Eas):450 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):80 A
最大漏极电流 (ID):80 A最大漏源导通电阻:0.007 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):214 W最大脉冲漏极电流 (IDM):320 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:MATTE TIN
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IPP070N06LG 数据手册

 浏览型号IPP070N06LG的Datasheet PDF文件第2页浏览型号IPP070N06LG的Datasheet PDF文件第3页浏览型号IPP070N06LG的Datasheet PDF文件第4页浏览型号IPP070N06LG的Datasheet PDF文件第5页浏览型号IPP070N06LG的Datasheet PDF文件第6页浏览型号IPP070N06LG的Datasheet PDF文件第7页 
IPB070N06L G IPP070N06L G  
OptiMOS® Power-Transistor  
Product Summary  
Features  
V DS  
60  
7
V
• For fast switching converters and sync. rectification  
• N-channel enhancement - logic level  
R DS(on),max SMD version  
I D  
m  
A
80  
• 175 °C operating temperature  
• Avalanche rated  
• Pb-free lead plating, RoHS compliant  
IPB070N06L G  
IPP070N06L G  
Type  
Package  
PG-TO263-3
070N06L
PG-TO220-3  
070N06L
Marking  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
T C=25 °C1)  
I D  
Continuous drain current  
80  
80  
A
T C=100 °C  
T C=25 °C2)  
I D,pulse  
Pulsed drain current  
320  
450  
E AS  
I D=80 A, R GS=25 Ω  
Avalanche energy, single pulse  
mJ  
I D=80 A, V DS=48 V,  
di /dt =200 A/µs,  
Reverse diode dv /dt  
dv /dt  
6
kV/µs  
T
j,max=175 °C  
V GS  
Gate source voltage  
±20  
V
P tot  
T C=25 °C  
Power dissipation  
214  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 175  
55/175/56  
1) Current is limited by bondwire; with an R thJC=0.7 K/W the chip is able to carry 114 A.  
2) See figure 3  
Rev. 1.22  
page 1  
2006-04-07  

IPP070N06LG 替代型号

型号 品牌 替代类型 描述 数据表
IPP070N06NG INFINEON

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