是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-220AB | 包装说明: | GREEN, PLASTIC, TO-220, 3 PIN |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.81 |
Is Samacsys: | N | 其他特性: | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
雪崩能效等级(Eas): | 450 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (Abs) (ID): | 80 A |
最大漏极电流 (ID): | 80 A | 最大漏源导通电阻: | 0.007 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 214 W | 最大脉冲漏极电流 (IDM): | 320 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | MATTE TIN |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IPP070N06NG | INFINEON |
类似代替 |
OptiMOS㈢ Power-Transistor | |
IPP065N06LG | INFINEON |
类似代替 |
OptiMOS㈢ Power-Transistor | |
SPI80N06S2-07 | INFINEON |
功能相似 |
OptiMOS Power-Transistor |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPP070N06NG | INFINEON |
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OptiMOS㈢ Power-Transistor | |
IPP070N06NGAKSA1 | INFINEON |
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Power Field-Effect Transistor, 80A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Met | |
IPP070N08N3G | INFINEON |
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OptiMOS3 Power-Transistor | |
IPP070N08N3GHKSA1 | INFINEON |
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Power Field-Effect Transistor, 80A I(D), 80V, 0.007ohm, 1-Element, N-Channel, Silicon, Met | |
IPP072N10N3 G | INFINEON |
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英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SM | |
IPP072N10N3G | INFINEON |
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OptiMOS?3 Power-Transistor | |
IPP072N10N3G | UMW |
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种类:N-Channel;漏源电压(Vdss):100V;持续漏极电流(Id)(在25°C | |
IPP072N10N3GXKSA1 | INFINEON |
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Power Field-Effect Transistor, 80A I(D), 100V, 0.0072ohm, 1-Element, N-Channel, Silicon, M | |
IPP073N13NM6 | INFINEON |
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OptiMOS? 6?135 V targets high-power motor-drive applications such as LEVs, e-forklifts, po | |
IPP075N15N3G | INFINEON |
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OptiMOS™3 Power-Transistor Features Excellent |