Datasheet > SPI80N06S2-07

SPI80N06S2-07

更新时间： 2024-11-15 22:21:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	421K
描述
OptiMOS Power-Transistor

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中文翻译

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数据手册
替代型号

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SPI80N06S2-07 数据手册

SPI80N06S2-07

SPP80N06S2-07,SPB80N06S2-07



OptiMOS Power-Transistor

Product Summary

Feature

6.6

• N-Channel

mΩ

DS(on)

• Enhancement mode

• 175°C operating temperature

• Avalanche rated

P- TO262 -3-1

P- TO263 -3-2

P- TO220 -3-1

• dv/dt rated

Type

Package

Ordering Code

Marking

2N0607

SPP80N06S2-07

P- TO220 -3-1 Q67060-S6024

P- TO263 -3-2 Q67060-S6026

P- TO262 -3-1 Q67060-S6037

SPB80N06S2-07

SPI80N06S2-07

Maximum Ratings, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

T =25°C

320

Pulsed drain current

D puls

T =25°C

530

Avalanche energy, single pulse

I =80A, V =25V, R =25Ω

Repetitive avalanche energy, limited by T

Reverse diode dv/dt

jmax

dv/dt

kV/µs

I =80A, V =44V, di/dt=200A/µs, T =175°C

jmax

Gate source voltage

Power dissipation

±20

250

tot

T =25°C

°C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

T , T

-55... +175

55/175/56

stg

Page 1

2003-05-09

12 3 4 5 6 7 8

中文翻译

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SPI80N06S2-07 替代型号

型号	品牌	替代类型	描述	数据表
IPP070N06NG	INFINEON	功能相似	OptiMOS㈢ Power-Transistor
IPP070N06LG	INFINEON	功能相似	OptiMOS㈢ Power-Transistor
SPP100N06S2-05	INFINEON	功能相似	OptiMOS Power-Transistor

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