Datasheet > IPP076N12N3G_13

IPP076N12N3G_13

更新时间： 2024-10-31 00:33:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	550K
描述
OptiMOSTM3 Power-Transistor

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IPP076N12N3G_13 数据手册

IPI076N12N3 G IPP076N12N3 G

Product Summary

OptiMOS^TM3 Power-Transistor

Features

V_DS

120

7.6

• N-channel, normal level

R_DS(on)max

I_D

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

100

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant; halogen free

• Qualified according to JEDEC¹⁾for target application

• Ideal for high-frequency switching and synchronous rectification

Type

IPI076N12N3 G

IPP076N12N3 G

Package

Marking

PG-TO262-3

076N12N

PG-TO220-3

076N12N

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

Continuous drain current

100

T _C=100 °C

Pulsed drain current²⁾

I _D,pulse

E _AS

T _C=25 °C

400

I _D=100 A, R _GS=25 W

Avalanche energy, single pulse

230

Gate source voltage³⁾

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

188

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 175

55/175/56

Rev. 2.4

page 1

2013-09-25

12 3 4 5 6 7...10

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