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IPP076N12N3G_13 PDF预览

IPP076N12N3G_13

更新时间: 2024-11-22 00:33:03
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 550K
描述
OptiMOSTM3 Power-Transistor

IPP076N12N3G_13 数据手册

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IPI076N12N3 G IPP076N12N3 G  
Product Summary  
OptiMOSTM3 Power-Transistor  
Features  
VDS  
120  
7.6  
V
• N-channel, normal level  
RDS(on)max  
ID  
mW  
A
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
100  
• 175 °C operating temperature  
• Pb-free lead plating; RoHS compliant; halogen free  
• Qualified according to JEDEC1) for target application  
• Ideal for high-frequency switching and synchronous rectification  
Type  
IPI076N12N3 G  
IPP076N12N3 G  
Package  
Marking  
PG-TO262-3  
076N12N  
PG-TO220-3  
076N12N  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
Continuous drain current  
100  
76  
A
T C=100 °C  
Pulsed drain current2)  
I D,pulse  
E AS  
T C=25 °C  
400  
I D=100 A, R GS=25 W  
Avalanche energy, single pulse  
230  
mJ  
V
Gate source voltage3)  
V GS  
±20  
P tot  
T C=25 °C  
Power dissipation  
188  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 175  
55/175/56  
Rev. 2.4  
page 1  
2013-09-25  

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