IPP093N06N3G

更新时间： 2024-11-05 11:08:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	291K
描述
OptiMOS?3 Power-Transistor

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中文翻译

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数据手册
替代型号

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IPP093N06N3G 数据手册

Type

IPB090N06N3 G IPP093N06N3 G

OptiMOS^™3 Power-Transistor

Product Summary

Features

V _DS

• for sync. rectification, drives and dc/dc SMPS

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

R _{DS(on),max (SMD)}

I _D

mΩ

• N-channel, normal level

• Avalanche rated

• Qualified according to JEDEC¹⁾for target applications

• Pb-free plating; RoHS compliant

• Halogen-free according to IEC61249-2-21

Type

IPB090N06N3 G

IPP093N06N3 G

Package

Marking

PG-TO263-3

090N06N

PG-TO220-3

093N06N

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

T _C=25 °C²⁾

I _D

Continuous drain current

T _C=100 °C

Pulsed drain current³⁾

I _D,pulse

E _AS

T _C=25 °C

200

I _D=50 A, R _GS=25 Ω

Avalanche energy, single pulse

Gate source voltage

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 175

55/175/56

¹⁾J-STD20 and JESD22

²⁾Current is limited by bondwire; with anR _thJC=1.6 K/W the chip is able to carry 74 A.

³⁾See figure 3

⁴⁾Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Rev. 1.2

page 1

2010-01-20

12 3 4 5 6 7...10

中文翻译

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IPP093N06N3G 替代型号

型号	品牌	替代类型	描述	数据表
IPP230N06L3G	INFINEON	功能相似	OptiMOS?3 Power-Transistor

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