Datasheet > IPP08CNE8N

IPP08CNE8N

更新时间： 2024-09-13 03:44:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	462K
描述
OptiMOS㈢2 Power-Transistor

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中文翻译

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数据手册

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IPP08CNE8N 数据手册

IPB08CNE8N G

IPI08CNE8N G IPP08CNE8N G

OptiMOS^®2 Power-Transistor

Product Summary

Features

V _DS

8.2

• N-channel, normal level

R _{DS(on),max (TO263)}

I _D

mΩ

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC¹⁾for target application

• Ideal for high-frequency switching and synchronous rectification

IPB08CNE8N G

IPI08CNE8N G

IPP08CNE8N G

Type

PG-TO263-3

08CNE8N

PG-TO262-3

08CNE8N

PG-TO220-3

08CNE8N

Package

Marking

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

T _C=100 °C

T _C=25 °C

Continuous drain current

Pulsed drain current²⁾

I _D,pulse

E _AS

380

262

I _D=95 A, R _GS=25 Ω

Avalanche energy, single pulse

I _D=95 A, V _DS=68 V,

di /dt =100 A/µs,

Reverse diode dv /dt

dv /dt

kV/µs

_j,max=175 °C

Gate source voltage³⁾

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

167

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 175

55/175/56

Rev. 1.01

page 1

2006-02-17

12 3 4 5 6 7...11

中文翻译

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