Datasheet > IPP065N06LG

IPP065N06LG

更新时间： 2024-09-16 03:44:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	445K
描述
OptiMOS㈢ Power-Transistor

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中文翻译

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数据手册
替代型号

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IPP065N06LG 数据手册

IPB065N06L G IPP065N06L G

OptiMOS^®Power-Transistor

Product Summary

Features

V _DS

6.5

• For fast switching converters and sync. rectification

• N-channel enhancement - logic level

R _DS(on),max

I _D

mΩ

• 175 °C operating temperature

• Avalanche rated

• Pb-free lead plating, RoHS compliant

IPB065N06L G

IPP065N06L G

Type

Package

Marking

IPB063N06L G

Package

PG-TPO-T26O32-633-2-3-2

PG06-T3NO0262L0-3-1

IPP063N06L G

Marking

065NP0P6-LTO220-3-1 06056N3N060L6L

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

T _C=25 °C¹⁾

I _D

Continuous drain current

T _C=100 °C

T _C=25 °C²⁾

I _D,pulse

Pulsed drain current

320

530

E _AS

I _D=80 A, R _GS=25 Ω

Avalanche energy, single pulse

I _D=80 A, V _DS=48 V,

di /dt =200 A/µs,

Reverse diode dv /dt

dv /dt

kV/µs

_j,max=175 °C

V _GS

Gate source voltage

±20

P _tot

T _C=25 °C

Power dissipation

250

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 175

55/175/56

¹⁾Current is limited by bondwire; with an R _thJC=0.6 K/W the chip is able to carry 125 A.

²⁾See figure 3

Rev. 1.1

page 1

2006-05-05

12 3 4 5 6 7...10

中文翻译

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IPP065N06LG 替代型号

型号	品牌	替代类型	描述	数据表
IPP070N06NG	INFINEON	类似代替	OptiMOS㈢ Power-Transistor
IPP070N06LG	INFINEON	类似代替	OptiMOS㈢ Power-Transistor
SPP100N06S2L-05	INFINEON	功能相似	OptiMOS Power-Transistor

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