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IPP069N20NM6 PDF预览

IPP069N20NM6

更新时间: 2024-11-19 17:01:31
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 1676K
描述
IPP069N20NM6 OptiMOS? 6 200 V?is setting the new technology standard. It addresses the need for high power density, high efficiency, and high reliability.?

IPP069N20NM6 数据手册

 浏览型号IPP069N20NM6的Datasheet PDF文件第2页浏览型号IPP069N20NM6的Datasheet PDF文件第3页浏览型号IPP069N20NM6的Datasheet PDF文件第4页浏览型号IPP069N20NM6的Datasheet PDF文件第5页浏览型号IPP069N20NM6的Datasheet PDF文件第6页浏览型号IPP069N20NM6的Datasheet PDF文件第7页 
IPP069N20NM6  
MOSFET  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ200ꢀV  
PG-TO220-3  
tab  
Features  
•ꢀN-channel,ꢀnormalꢀlevel  
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)  
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)  
•ꢀVeryꢀlowꢀreverseꢀrecoveryꢀchargeꢀ(Qrr)  
•ꢀHighꢀavalancheꢀenergyꢀrating  
•ꢀ175°Cꢀoperatingꢀtemperature  
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
•ꢀMSLꢀ1ꢀclassifiedꢀaccordingꢀtoꢀJ-STD-020  
•ꢀ100%ꢀavalancheꢀtested  
Drain  
Pin 2, Tab  
Productꢀvalidation  
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications  
Gate  
Pin 1  
Source  
Pin 3  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
Value  
200  
6.9  
Unit  
VDS  
V
RDS(on),max  
m  
A
ID  
136  
232  
73  
Qoss  
nC  
nC  
nC  
QG  
Qrr(1000A/µs)  
391  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
IPP069N20NM6  
PG-TO220-3  
069N20N6  
-
Final Data Sheet  
1
Rev.ꢀ2.0,ꢀꢀ2023-12-07  

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