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IPP05N03LA PDF预览

IPP05N03LA

更新时间: 2024-11-04 22:33:43
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 349K
描述
OptiMOS 2 Power-Transistor

IPP05N03LA 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.82
其他特性:LOGIC LEVEL COMPATIBLE雪崩能效等级(Eas):190 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:25 V
最大漏极电流 (Abs) (ID):80 A最大漏极电流 (ID):80 A
最大漏源导通电阻:0.0081 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):94 W最大脉冲漏极电流 (IDM):385 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:MATTE TIN
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IPP05N03LA 数据手册

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IPB05N03LA  
IPI05N03LA, IPP05N03LA  
OptiMOS®2 Power-Transistor  
Product Summary  
Features  
V DS  
25  
4.6  
80  
V
• Ideal for high-frequency dc/dc converters  
R DS(on),max (SMD version)  
m  
A
• Qualified according to JEDEC1) for target application  
I D  
• N-channel - Logic level  
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
P-TO263-3-2  
P-TO262-3-1  
P-TO220-3-1  
• Superior thermal resistance  
• 175 °C operating temperature  
• dv /dt rated  
Type  
Package  
Ordering Code Marking  
IPB05N03LA  
IPI05N03LA  
IPP05N03LA  
P-TO263-3-2  
P-TO262-3-1  
P-TO220-3-1  
Q67042-S4141  
Q67042-S4142  
Q67042-S4143  
05N03LA  
05N03LA  
05N03LA  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
T C=25 °C2)  
I D  
Continuous drain current  
80  
76  
A
T C=100 °C  
T C=25 °C3)  
I D,pulse  
Pulsed drain current  
385  
190  
E AS  
I D=72 A, R GS=25 Ω  
Avalanche energy, single pulse  
mJ  
I D=80 A, V DS=20 V,  
di /dt =200 A/µs,  
Reverse diode dv /dt  
dv /dt  
6
kV/µs  
T
j,max=175 °C  
Gate source voltage4)  
V GS  
±20  
94  
V
P tot  
T C=25 °C  
Power dissipation  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 175  
55/175/56  
1) J-STD20 and JESD22  
Rev. 1.4  
page 1  
2004-03-23  

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