是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-220AB | 包装说明: | ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.82 |
其他特性: | LOGIC LEVEL COMPATIBLE | 雪崩能效等级(Eas): | 190 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 25 V |
最大漏极电流 (Abs) (ID): | 80 A | 最大漏极电流 (ID): | 80 A |
最大漏源导通电阻: | 0.0081 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 94 W | 最大脉冲漏极电流 (IDM): | 385 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | MATTE TIN |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPP05N03LB | INFINEON |
获取价格 |
OptiMOS㈢2 Power-Transistor | |
IPP05N03LBG | INFINEON |
获取价格 |
OptiMOS㈢2 Power-Transistor | |
IPP05N03LBG_08 | INFINEON |
获取价格 |
OptiMOS2 Power-Transistor | |
IPP05N03LBGHKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 30V, 0.0053ohm, 1-Element, N-Channel, Silicon, Me | |
IPP060N06N | INFINEON |
获取价格 |
New OptiMOS⢠40V and 60V | |
IPP060N06NAKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 17A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Met | |
IPP062NE7N3 | INFINEON |
获取价格 |
OptiMOS3 Power-Transistor | |
IPP062NE7N3G | INFINEON |
获取价格 |
OptiMOS⢠3 Power-Transistor | |
IPP062NE7N3GXKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 75V, 0.0062ohm, 1-Element, N-Channel, Silicon, Me | |
IPP065N03LG | INFINEON |
获取价格 |
OptiMOS?3 Power-Transistor |