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IPP05N03LBG_08 PDF预览

IPP05N03LBG_08

更新时间: 2024-11-05 11:08:51
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 275K
描述
OptiMOS2 Power-Transistor

IPP05N03LBG_08 数据手册

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IPP05N03LB G  
OptiMOS®2 Power-Transistor  
Product Summary  
Features  
V DS  
30  
5.3  
80  
V
• Ideal for high-frequency dc/dc converters  
• Qualified according to JEDEC1) for target application  
R DS(on),max  
I D  
m  
A
• N-channel - Logic level  
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
PG-TO220-3-1  
• Superior thermal resistance  
• 175 °C operating temperature  
• dv /dt rated  
• Pb-free lead plating; RoHS compliant  
Type  
Package  
Marking  
IPP05N03LB G  
PG-TO220-3-1  
05N03LB  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
T C=25 °C2)  
I D  
Continuous drain current  
80  
70  
A
T C=100 °C  
T C=25 °C3)  
I D,pulse  
Pulsed drain current  
320  
136  
E AS  
I D=80 A, R GS=25 Ω  
Avalanche energy, single pulse  
mJ  
I D=80 A, V DS=20 V,  
di /dt =200 A/µs,  
Reverse diode dv /dt  
dv /dt  
6
kV/µs  
T
j,max=175 °C  
Gate source voltage4)  
V GS  
±20  
94  
V
P tot  
T C=25 °C  
Power dissipation  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 175  
55/175/56  
1) J-STD20 and JESD22  
Rev. 0.95  
page 1  
2008-05-06  

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