IPP060N06N

更新时间： 2024-11-18 12:23:07

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
2页	1021K
描述
New OptiMOSâ¢ 40V and 60V

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中文翻译

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技术参数
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IPP060N06N 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	TO-220AB
包装说明：	FLANGE MOUNT, R-PSFM-T3	针数：	3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.29.00.95	风险等级：	5.65
Is Samacsys：	N	雪崩能效等级（Eas）：	60 mJ
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	60 V
最大漏极电流 (ID)：	17 A	最大漏源导通电阻：	0.006 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	JESD-609代码：	e3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	180 A	表面贴装：	NO
端子面层：	Tin (Sn)	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

IPP060N06N 数据手册

Product Brief

Features

Optimized for Synchronous

Rectiﬁcation

New OptiMOS™ 40V and 60V

Shrink Your Design and Boost Eﬃciency

35% lower R_DS(on)than

alternative devices

45% improvement of FOM

over similar devices

New OptiMOS™ 40V and 60V, Inﬁneon’s latest generation of power MOSFETs,

is optimized for Synchronous Rectiﬁcation in switched mode power supplies

(SMPS) such as those found in servers and desktops. In addition these devices

are a perfect choice for a broad range of industrial applications including motor

control, solar micro inverter and fast switching DC/DC converter.

Integrated Schottky-like diode

RoHS compliant - halogen free

MSL1 rated

Beneﬁts

Highest system eﬃciency

New 40V and 60V product families, feature not only the industry’s lowest R_DS(on)

but also a perfect switching behavior for fast switching applications. 35%

lower R_DS(on)and 45% lower Figure of Merit (R_DS(on)x Q_g)compared to alternative

devices has been realized by advanced thin wafer technology.

Less paralleling required

Increased power density

System cost reduction

Very low voltage overshoot

The fast growing market of solar micro inverter requires ever higher

performance levels of components. In typical photovoltaic topologies both

R_DS(on)and switching characteristics are equally important. In a micro inverter

1.5% higher eﬃciency can be achieved at a 20% load condition by using

BSC016N06NS (1.6mΩ SuperSO8 (5mmx6mm) 60V device).

Applications

Synchronous Rectiﬁcation

Solar micro inverter

Isolated DC/DC converters

Motor control for 12-48V systems

Or-ing switches

40V SuperSO8

60V SuperSO8

Existing OptiMOS™ 40V

New Generation 40V

Existing OptiMOS™ 60V

New Generation 60V

-41%

-48%

40V

60V

www.inﬁneon.com/newoptimos

中文翻译

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与IPP060N06N相关器件

型号	品牌	获取价格	描述	数据表
IPP060N06NAKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 17A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Met
IPP062NE7N3	INFINEON	获取价格	OptiMOS3 Power-Transistor
IPP062NE7N3G	INFINEON	获取价格	OptiMOSâ¢ 3 Power-Transistor
IPP062NE7N3GXKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 80A I(D), 75V, 0.0062ohm, 1-Element, N-Channel, Silicon, Me
IPP065N03LG	INFINEON	获取价格	OptiMOS?3 Power-Transistor
IPP065N03LGXKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Me
IPP065N04NG	INFINEON	获取价格	OptiMOS3 Power-Transistor
IPP065N06LG	INFINEON	获取价格	OptiMOS㈢ Power-Transistor
IPP065N06LGAKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 80A I(D), 60V, 0.0065ohm, 1-Element, N-Channel, Silicon, Me
IPP069N20NM6	INFINEON	获取价格	IPP069N20NM6 OptiMOS? 6 200 V?is setting the new technology standard. It addresses the nee

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