是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.65 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 60 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 17 A | 最大漏源导通电阻: | 0.006 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 180 A | 表面贴装: | NO |
端子面层: | Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPP060N06NAKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 17A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Met | |
IPP062NE7N3 | INFINEON |
获取价格 |
OptiMOS3 Power-Transistor | |
IPP062NE7N3G | INFINEON |
获取价格 |
OptiMOS⢠3 Power-Transistor | |
IPP062NE7N3GXKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 75V, 0.0062ohm, 1-Element, N-Channel, Silicon, Me | |
IPP065N03LG | INFINEON |
获取价格 |
OptiMOS?3 Power-Transistor | |
IPP065N03LGXKSA1 | INFINEON |
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Power Field-Effect Transistor, 50A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Me | |
IPP065N04NG | INFINEON |
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OptiMOS3 Power-Transistor | |
IPP065N06LG | INFINEON |
获取价格 |
OptiMOS㈢ Power-Transistor | |
IPP065N06LGAKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 60V, 0.0065ohm, 1-Element, N-Channel, Silicon, Me | |
IPP069N20NM6 | INFINEON |
获取价格 |
IPP069N20NM6 OptiMOS? 6 200 V?is setting the new technology standard. It addresses the nee |