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IPP05N03L PDF预览

IPP05N03L

更新时间: 2024-11-17 22:33:43
品牌 Logo 应用领域
英飞凌 - INFINEON 转换器
页数 文件大小 规格书
8页 452K
描述
OptiMOS Buck converter series

IPP05N03L 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:PLASTIC, TO-220, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.87
其他特性:LOGIC LEVEL COMPATIBLE, AVALANCHE RATED雪崩能效等级(Eas):60 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):80 A
最大漏极电流 (ID):80 A最大漏源导通电阻:0.0075 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):154 W
最大脉冲漏极电流 (IDM):320 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IPP05N03L 数据手册

 浏览型号IPP05N03L的Datasheet PDF文件第2页浏览型号IPP05N03L的Datasheet PDF文件第3页浏览型号IPP05N03L的Datasheet PDF文件第4页浏览型号IPP05N03L的Datasheet PDF文件第5页浏览型号IPP05N03L的Datasheet PDF文件第6页浏览型号IPP05N03L的Datasheet PDF文件第7页 
IPP05N03L  
IPB05N03L  
OptiMOS Buck converter series  
Product Summary  
Feature  
V
30  
4.9  
80  
V
DS  
· N-Channel  
R
I
max. SMD version  
mW  
A
DS(on)  
· Logic Level  
D
· Very low on-resistance R  
DS(on)  
P- TO263 -3-2  
P- TO220 -3-1  
· Excellent Gate Charge x R  
product (FOM)  
DS(on)  
· Superior thermal resistance  
· 175°C operating temperature  
· Avalanche rated  
· dv/dt rated  
· Ideal for fast switching buck converters  
Type  
Package  
Ordering Code  
Marking  
05N03L  
05N03L  
IPP05N03L  
P- TO220 -3-1 Q67042-S4038  
P- TO263 -3-2 Q67040-S4343  
IPB05N03L  
Maximum Ratings, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
Unit  
1)  
A
Continuous drain current  
I
D
1)  
T = 25 °C  
C
80  
80  
320  
Pulsed drain current  
I
D puls  
T =25°C  
C
60  
mJ  
Avalanche energy, single pulse  
E
AS  
I =55A, V =25V, R =25W  
D
DD  
GS  
2)  
jmax  
16  
6
Repetitive avalanche energy, limited by T  
Reverse diode dv/dt  
E
AR  
kV/µs  
dv/dt  
I =80A, V =24V, di/dt=200A/µs, T =175°C  
jmax  
S
DS  
V
Gate source voltage  
Power dissipation  
V
±20  
167  
GS  
W
P
tot  
T =25°C  
C
°C  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
T , T  
-55... +175  
55/175/56  
j
stg  
Page 1  
2003-01-17  

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