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IPP05CN10LG PDF预览

IPP05CN10LG

更新时间: 2024-11-05 11:57:03
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 329K
描述
OptiMOS2 Power-Transistor

IPP05CN10LG 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:GREEN, PLASTIC, TO-220, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.7
其他特性:LOGIC LEVEL COMPATIBLE雪崩能效等级(Eas):826 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):100 A最大漏极电流 (ID):100 A
最大漏源导通电阻:0.0051 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):300 W
最大脉冲漏极电流 (IDM):400 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IPP05CN10LG 数据手册

 浏览型号IPP05CN10LG的Datasheet PDF文件第2页浏览型号IPP05CN10LG的Datasheet PDF文件第3页浏览型号IPP05CN10LG的Datasheet PDF文件第4页浏览型号IPP05CN10LG的Datasheet PDF文件第5页浏览型号IPP05CN10LG的Datasheet PDF文件第6页浏览型号IPP05CN10LG的Datasheet PDF文件第7页 
IPP05CN10L G  
OptiMOS®2 Power-Transistor  
Product Summary  
Features  
V DS  
100  
5.1  
V
• N-channel, logic level  
R DS(on),max  
I D  
m  
A
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
100  
• 175 °C operating temperature  
• Pb-free lead plating; RoHS compliant  
• Qualified according to JEDEC1) for target application  
• Ideal for high-frequency switching and synchronous rectification  
Type  
IPP05CN10L G  
Package  
Marking  
PG-TO220-3  
05CN10L  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
T C=25 °C2)  
I D  
Continuous drain current  
100  
100  
400  
826  
A
T C=100 °C  
Pulsed drain current3)  
I D,pulse  
E AS  
T C=25 °C  
I D=100 A, R GS=25 Ω  
Avalanche energy, single pulse  
mJ  
I D=100 A, V DS=80 V,  
di /dt =100 A/µs,  
Reverse diode dv /dt  
dv /dt  
6
kV/µs  
T
j,max=175 °C  
Gate source voltage 4)  
V GS  
±20  
V
P tot  
T C=25 °C  
Power dissipation  
300  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 175  
55/175/56  
Rev. 1.02  
page 1  
2008-10-31  

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