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IPI041N12N3GAKSA1 PDF预览

IPI041N12N3GAKSA1

更新时间: 2024-11-05 14:51:35
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
11页 857K
描述
Power Field-Effect Transistor, 120A I(D), 120V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3

IPI041N12N3GAKSA1 技术参数

是否无铅:含铅是否Rohs认证:符合
生命周期:Active零件包装代码:TO-262AA
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:18 weeks风险等级:5.69
Is Samacsys:N雪崩能效等级(Eas):900 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:120 V
最大漏极电流 (ID):120 A最大漏源导通电阻:0.0041 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):480 A
认证状态:Not Qualified表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IPI041N12N3GAKSA1 数据手册

 浏览型号IPI041N12N3GAKSA1的Datasheet PDF文件第2页浏览型号IPI041N12N3GAKSA1的Datasheet PDF文件第3页浏览型号IPI041N12N3GAKSA1的Datasheet PDF文件第4页浏览型号IPI041N12N3GAKSA1的Datasheet PDF文件第5页浏览型号IPI041N12N3GAKSA1的Datasheet PDF文件第6页浏览型号IPI041N12N3GAKSA1的Datasheet PDF文件第7页 
IPI041N12N3 G  
IPB038N12N3 G  
IPP041N12N3 G  
OptiMOSTM3 Power-Transistor  
Product Summary  
Features  
VDS  
120  
3.8  
V
• N-channel, normal level  
RDS(on),max (TO-263)  
ID  
mW  
A
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
120  
• 175 °C operating temperature  
• Pb-free lead plating; RoHS compliant, halogen free  
• Qualified according to JEDEC1) for target application  
• Ideal for high-frequency switching and synchronous rectification  
Type  
IPB038N12N3 G  
IPI041N12N3 G  
IPP041N12N3 G  
Package  
Marking  
PG-TO263-3  
038N12N  
PG-TO262-3  
041N12N  
PG-TO220-3  
041N12N  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
T C=25 °C2)  
I D  
Continuous drain current  
120  
120  
A
T C=100 °C  
Pulsed drain current3)  
I D,pulse  
E AS  
T C=25 °C  
480  
I D=100 A, R GS=25 W  
Avalanche energy, single pulse  
900  
mJ  
V
Gate source voltage 4)  
V GS  
±20  
P tot  
T C=25 °C  
Power dissipation  
300  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 175  
55/175/56  
Rev. 2.3  
page 1  
2014-04-15  

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