5秒后页面跳转
IPI05N03LA PDF预览

IPI05N03LA

更新时间: 2024-11-20 22:26:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
10页 349K
描述
OptiMOS 2 Power-Transistor

IPI05N03LA 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-262AA包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.83
Is Samacsys:N其他特性:LOGIC LEVEL COMPATIBLE
雪崩能效等级(Eas):190 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:25 V最大漏极电流 (Abs) (ID):80 A
最大漏极电流 (ID):80 A最大漏源导通电阻:0.0081 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):94 W
最大脉冲漏极电流 (IDM):385 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IPI05N03LA 数据手册

 浏览型号IPI05N03LA的Datasheet PDF文件第2页浏览型号IPI05N03LA的Datasheet PDF文件第3页浏览型号IPI05N03LA的Datasheet PDF文件第4页浏览型号IPI05N03LA的Datasheet PDF文件第5页浏览型号IPI05N03LA的Datasheet PDF文件第6页浏览型号IPI05N03LA的Datasheet PDF文件第7页 
IPB05N03LA  
IPI05N03LA, IPP05N03LA  
OptiMOS®2 Power-Transistor  
Product Summary  
Features  
V DS  
25  
4.6  
80  
V
• Ideal for high-frequency dc/dc converters  
R DS(on),max (SMD version)  
m  
A
• Qualified according to JEDEC1) for target application  
I D  
• N-channel - Logic level  
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
P-TO263-3-2  
P-TO262-3-1  
P-TO220-3-1  
• Superior thermal resistance  
• 175 °C operating temperature  
• dv /dt rated  
Type  
Package  
Ordering Code Marking  
IPB05N03LA  
IPI05N03LA  
IPP05N03LA  
P-TO263-3-2  
P-TO262-3-1  
P-TO220-3-1  
Q67042-S4141  
Q67042-S4142  
Q67042-S4143  
05N03LA  
05N03LA  
05N03LA  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
T C=25 °C2)  
I D  
Continuous drain current  
80  
76  
A
T C=100 °C  
T C=25 °C3)  
I D,pulse  
Pulsed drain current  
385  
190  
E AS  
I D=72 A, R GS=25 Ω  
Avalanche energy, single pulse  
mJ  
I D=80 A, V DS=20 V,  
di /dt =200 A/µs,  
Reverse diode dv /dt  
dv /dt  
6
kV/µs  
T
j,max=175 °C  
Gate source voltage4)  
V GS  
±20  
94  
V
P tot  
T C=25 °C  
Power dissipation  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 175  
55/175/56  
1) J-STD20 and JESD22  
Rev. 1.4  
page 1  
2004-03-23  

与IPI05N03LA相关器件

型号 品牌 获取价格 描述 数据表
IPI06CN10NG INFINEON

获取价格

OptiMOS㈢2 Power-Transistor
IPI06CN10NGHKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 100A I(D), 100V, 0.0065ohm, 1-Element, N-Channel, Silicon,
IPI06CNE8NG INFINEON

获取价格

OptiMOS㈢2 Power-Transistor
IPI06N03LA INFINEON

获取价格

OptiMOS 2 Power-Transistor
IPI070N06NG INFINEON

获取价格

Power Field-Effect Transistor, 80A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Met
IPI070N08N3G INFINEON

获取价格

OptiMOS3 Power-Transistor
IPI072N10N3GXKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 80A I(D), 100V, 0.0072ohm, 1-Element, N-Channel, Silicon, M
IPI075N15N3 G INFINEON

获取价格

与次优竞品相比,150V OptiMOS? R DS(on) 降低 40%,品质因数 (F
IPI075N15N3G INFINEON

获取价格

OptiMOS?3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
IPI075N15N3-G INFINEON

获取价格

OptiMOS 3 Power-Transistor