型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPI075N15N3G | INFINEON |
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OptiMOS?3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) | |
IPI075N15N3-G | INFINEON |
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OptiMOS 3 Power-Transistor | |
IPI076N12N3 G | INFINEON |
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120V OptiMOS? 系列提供业内最低导通电阻和最快开关性能,适用于各种应用,支持实 | |
IPI076N12N3G | INFINEON |
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OptiMOSTM3 Power-Transistor | |
IPI076N12N3GAKSA1 | INFINEON |
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Power Field-Effect Transistor, 100A I(D), 120V, 0.0076ohm, 1-Element, N-Channel, Silicon, | |
IPI076N15N5 | INFINEON |
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Power Field-Effect Transistor, 112A I(D), 150V, 0.0076ohm, 1-Element, N-Channel, Silicon, | |
IPI076N15N5AKSA1 | INFINEON |
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Power Field-Effect Transistor, 112A I(D), 150V, 0.0076ohm, 1-Element, N-Channel, Silicon, | |
IPI086N10N3 G | INFINEON |
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英飞凌的 100V OptiMOS? 功率 MOSFET 可以为高效率、高功率密度的 SM | |
IPI086N10N3G | INFINEON |
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OptiMOS™3 Power-Transistor Features Excellent | |
IPI08CN10NG | INFINEON |
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OptiMOS㈢2 Power-Transistor |