IPI100N06S3-03

更新时间： 2024-11-05 03:06:39

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
8页	162K
描述
OptiMOS㈢-T Power-Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IPI100N06S3-03 数据手册

IPB100N06S3-03

IPI100N06S3-03, IPP100N06S3-03

OptiMOS^®-T Power-Transistor

Product Summary

V_DS

Features

3.0

100

• N-channel - Enhancement mode

_DS(on),max(SMD version)

mΩ

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

I _D

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

• Green package (lead free)

• Ultra low Rds(on)

• 100% Avalanche tested

• ESD Class 3 (HBM)

EIA/JESD22-A114-B

Type

Package

Ordering Code Marking

IPB100N06S3-03

IPI100N06S3-03

IPP100N06S3-03

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

SP0000-87982

SP0000-87992

SP0000-87980

3PN0603

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

Continuous drain current¹⁾

I _D

T _C=25 °C, V_GS=10 V

T _C=100 °C,

100

400

690

_GS=10 V²⁾

Pulsed drain current²⁾

I _D,pulse

E_AS

T _C=25 °C

I _D=50 A

Avalanche energy, single pulse³⁾

Drain gate voltage²⁾

Gate source voltage⁴⁾

V_DG

±20

V_GS

P_tot

T _C=25 °C

Power dissipation

300

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

Rev. 1.0

page 1

2005-09-16

12 3 4 5 6 7 8

中文翻译

下载PDF

与IPI100N06S3-03相关器件

型号	品牌	获取价格	描述	数据表
IPI100N06S3-04	INFINEON	获取价格	OptiMOS-T Power-Transistor
IPI100N06S3L-03	INFINEON	获取价格	OptiMOS㈢-T Power-Transistor
IPI100N06S3L03AKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 100A I(D), 55V, 0.0046ohm, 1-Element, N-Channel, Silicon, M
IPI100N06S3L-04	INFINEON	获取价格	OptiMOS-T Power-Transistor
IPI100N08N3G	INFINEON	获取价格	OptiMOS™3 Power-Transistor Features Ideal for
IPI100N08N3GHKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 70A I(D), 80V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
IPI100N08S2-07	INFINEON	获取价格	OptiMOS㈢ Power-Transistor
IPI100N10S3-05	INFINEON	获取价格	OptiMOS-T Power-Transistor
IPI100N10S305AKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 100A I(D), 100V, 0.0051ohm, 1-Element, N-Channel, Silicon,
IPI100N12S3-05	INFINEON	获取价格	Power Field-Effect Transistor