生命周期: | Active | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.71 | 其他特性: | LOGIC LEVEL COMPATIBLE |
雪崩能效等级(Eas): | 690 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 55 V | 最大漏极电流 (ID): | 100 A |
最大漏源导通电阻: | 0.0046 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-262AA | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 400 A |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPI100N06S3L-04 | INFINEON |
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OptiMOS-T Power-Transistor | |
IPI100N08N3G | INFINEON |
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OptiMOS™3 Power-Transistor Features Ideal for | |
IPI100N08N3GHKSA1 | INFINEON |
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Power Field-Effect Transistor, 70A I(D), 80V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta | |
IPI100N08S2-07 | INFINEON |
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OptiMOS㈢ Power-Transistor | |
IPI100N10S3-05 | INFINEON |
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OptiMOS-T Power-Transistor | |
IPI100N10S305AKSA1 | INFINEON |
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Power Field-Effect Transistor, 100A I(D), 100V, 0.0051ohm, 1-Element, N-Channel, Silicon, | |
IPI100N12S3-05 | INFINEON |
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Power Field-Effect Transistor | |
IPI100N12S305AKSA1 | INFINEON |
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Power Field-Effect Transistor, 100A I(D), 120V, 0.0051ohm, 1-Element, N-Channel, Silicon, | |
IPI100P03P3L-04 | INFINEON |
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OptiMOS-P Trench Power-Transistor | |
IPI110N20N3G | INFINEON |
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OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) |