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IPI057N08N3G

更新时间: 2024-01-30 11:57:37
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 522K
描述
OptiMOS 3 Power-Transistor Features N-channel, normal level

IPI057N08N3G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-262AA包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.82
雪崩能效等级(Eas):210 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:80 V最大漏极电流 (Abs) (ID):80 A
最大漏极电流 (ID):80 A最大漏源导通电阻:0.0057 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):150 W最大脉冲漏极电流 (IDM):320 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:MATTE TIN
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IPI057N08N3G 数据手册

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IPP057N08N3 G IPI057N08N3 G  
IPB054N08N3 G  
OptiMOS®3 Power-Transistor  
Product Summary  
Features  
V DS  
80  
5.4  
80  
V
• N-channel, normal level  
R DS(on),max (SMD)  
I D  
m  
A
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
previous engineering  
sample codes:  
IPP06CN08N  
• 175 °C operating temperature  
• Pb-free lead plating; RoHS compliant  
• Qualified according to JEDEC1) for target application  
• Ideal for high-frequency switching and synchronous rectification  
Type  
IPP057N08N3 G  
IPI057N08N3 G  
IPB054N08N3 G  
Package  
Marking  
PG-TO220-3  
057N08N  
PG-TO262-3  
057N08N  
PG-TO263-3  
054N08N  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
T C=25 °C2)  
I D  
Continuous drain current  
80  
80  
A
T C=100 °C  
Pulsed drain current2)  
I D,pulse  
E AS  
T C=25 °C  
320  
I D=80 A, R GS=25 Ω  
Avalanche energy, single pulse  
Gate source voltage  
210  
mJ  
V
V GS  
±20  
P tot  
T C=25 °C  
Power dissipation  
150  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 175  
55/175/56  
Rev. 1.0  
page 1  
2008-01-25  

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