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IPI045N10N3G PDF预览

IPI045N10N3G

更新时间: 2024-11-18 11:08:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
11页 345K
描述
OptiMOS?3 Power-Transistor

IPI045N10N3G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-262AA
包装说明:TO-262, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:1 week风险等级:5.19
Is Samacsys:N雪崩能效等级(Eas):340 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):100 A最大漏极电流 (ID):100 A
最大漏源导通电阻:0.0045 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-262AAJESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):214 W
最大脉冲漏极电流 (IDM):400 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IPI045N10N3G 数据手册

 浏览型号IPI045N10N3G的Datasheet PDF文件第2页浏览型号IPI045N10N3G的Datasheet PDF文件第3页浏览型号IPI045N10N3G的Datasheet PDF文件第4页浏览型号IPI045N10N3G的Datasheet PDF文件第5页浏览型号IPI045N10N3G的Datasheet PDF文件第6页浏览型号IPI045N10N3G的Datasheet PDF文件第7页 
IPB042N10N3 G IPI045N10N3 G  
IPP045N10N3 G  
OptiMOS™3 Power-Transistor  
Product Summary  
Features  
V DS  
100  
4.2  
V
• N-channel, normal level  
R DS(on),max (TO 263)  
I D  
mΩ  
A
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
100  
• 175 °C operating temperature  
• Pb-free lead plating; RoHS compliant  
• Qualified according to JEDEC1) for target application  
• Ideal for high-frequency switching and synchronous rectification  
• Halogen-free according to IEC61249-2-21  
Type  
IPB042N10N3 G  
IPI045N10N3 G  
IPP045N10N3 G  
Package  
Marking  
PG-TO263-3  
042N10N  
PG-TO262-3  
045N10N  
PG-TO220-3  
045N10N  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
T C=25 °C2)  
I D  
Continuous drain current  
100  
100  
A
T C=100 °C  
Pulsed drain current2)  
I D,pulse  
E AS  
T C=25 °C  
400  
I D=100 A, R GS=25 Ω  
Avalanche energy, single pulse  
Gate source voltage  
340  
mJ  
V
V GS  
±20  
P tot  
T C=25 °C  
Power dissipation  
214  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 175  
55/175/56  
1)J-STD20 and JESD22  
2) See figure 3  
Rev. 2.5  
page 1  
2010-01-13  

IPI045N10N3G 替代型号

型号 品牌 替代类型 描述 数据表
IPI04CN10NG INFINEON

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