Datasheet > IPB054N06N3G

IPB054N06N3G

更新时间： 2024-09-15 11:08:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	293K
描述
OptiMOS?3 Power-Transistor

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中文翻译

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数据手册
替代型号

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IPB054N06N3G 数据手册

Type

IPB054N06N3 G IPP057N06N3 G

OptiMOS^™3 Power-Transistor

Product Summary

Features

V _DS

5.4

• Ideal for high frequency switching and sync. rec.

• Optimized technology for DC/DC converters

• Excellent gate charge x R _DS(on)product (FOM)

R _{DS(on),max (SMD)}

I _D

mΩ

• N-channel, normal level

• 100% avalanche tested

• Pb-free plating; RoHS compliant

• Qualified according to JEDEC¹⁾for target applications

• Halogen-free according to IEC61249-2-21

Type

IPB054N06N3 G

IPP057N06N3 G

Package

Marking

PG-TO263-3

054N06N

PG-TO220-3

057N06N

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

T _C=25 °C²⁾

I _D

Continuous drain current

T _C=100 °C

Pulsed drain current³⁾

I _D,pulse

E _AS

T _C=25 °C

320

Avalanche energy, single pulse⁴⁾

Gate source voltage

I _D=80 A, R _GS=25 Ω

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

115

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

¹⁾J-STD20 and JESD22

-55 ... 175

55/175/56

²⁾Current is limited by bondwire; with anR _thJC=1.3 K/W the chip is able to carry 108 A.

³⁾See figure 3 for more detailed information

⁴⁾See figure 13 for more detailed information

Rev. 2.2

page 1

2010-01-14

12 3 4 5 6 7...10

中文翻译

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IPB054N06N3G 替代型号

型号	品牌	替代类型	描述	数据表
IPB054N06N3GATMA1	INFINEON	完全替代	Power Field-Effect Transistor, 80A I(D), 60V, 0.0057ohm, 1-Element, N-Channel, Silicon, Me
SPB80N06S2-H5	INFINEON	功能相似	OptiMOS Power-Transistor
SPB80N06S2L-05	INFINEON	功能相似	OptiMOS Power-Transistor

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