Datasheet > IPB068N20NM6

IPB068N20NM6

更新时间： 2024-09-16 17:00:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	1146K
描述
IPB068N20NM6 OptiMOS? 6 200 V?is setting the new technology standard. It addresses the need for high power density, high efficiency, and high reliability.?

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IPB068N20NM6 数据手册

IPB068N20NM6

MOSFET

OptiMOS^TMꢀ6ꢀPower-Transistor,ꢀ200ꢀV

D²PAK

Features

tab

•ꢀN-channel,ꢀnormalꢀlevel

•ꢀVeryꢀlowꢀon-resistanceꢀR_DS(on)

•ꢀExcellentꢀgateꢀchargeꢀxꢀR_DS(on)ꢀproductꢀ(FOM)

•ꢀVeryꢀlowꢀreverseꢀrecoveryꢀchargeꢀ(Q_rr)

•ꢀHighꢀavalancheꢀenergyꢀrating

•ꢀ175°Cꢀoperatingꢀtemperature

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant

•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21

•ꢀMSLꢀ1ꢀclassifiedꢀaccordingꢀtoꢀJ-STD-020

•ꢀ100%ꢀavalancheꢀtested

Drain

Pin 2, Tab

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

Gate

Pin 1

Source

Pin 3

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

Value

200

6.8

Unit

V_DS

R_DS(on),max

I_D

mΩ

134

232

Q_oss

Q_G

Q_rr

391

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

IPB068N20NM6

PG-TO263-3

068N20N6

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2023-10-09

12 3 4 5 6 7...11

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