IKW40T120XK

更新时间： 2024-01-03 09:36:16

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体二极管晶体管功率控制瞄准线双极性晶体管栅局域网快速恢复二极管
页数	文件大小	规格书
15页	452K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IKW40T120XK 数据手册

IKW40T120

TrenchStop Series

Low Loss DuoPack : IGBT in Trench and Fieldstop technology

with soft, fast recovery anti-parallel EmCon HE diode

•

Best in class TO247

Short circuit withstand time – 10µs

Designed for :

- Frequency Converters

- Uninterrupted Power Supply

•

Trench and Fieldstop technology for 1200 V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

NPT technology offers easy parallel switching capability due to

positive temperature coefficient in V_CE(sat)

Low EMI

P-TO-247-3-1

(TO-247AC)

•

Low Gate Charge

Very soft, fast recovery anti-parallel EmCon HE diode

Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

V_CE

I_C

V_{CE(sat),Tj=25°C}

T_j,max

Package

TO-247AC

Ordering Code

IKW40T120

1200V

40A

1.8V

Q67040-S4520

150°C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

DC collector current

T_C= 25°C

V_CE

I_C

1200

T_C= 100°C

Pulsed collector current, t_plimited by T_jmax

Turn off safe operating area

I_{Cpul s}

105

V_CE≤ 1200V, T_j≤ 150°C

Diode forward current

T_C= 25°C

I_F

T_C= 100°C

Diode pulsed current, t_plimited by T_jmax

Gate-emitter voltage

Short circuit withstand time¹⁾

V_GE= 15V, V_CC≤ 1200V, T_j≤ 150°C

Power dissipation

I_{Fpul s}

V_{G E}

t_SC

105

±20

µs

P_{t ot}

270

T_C= 25°C

Operating junction temperature

Storage temperature

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

T_j

-40...+150

-55...+150

260

°C

T_stg

¹⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

Preliminary / Rev. 1 Jul-02

Power Semiconductors

12 3 4 5 6 7...15

中文翻译

下载PDF

与IKW40T120XK相关器件

型号	品牌	获取价格	描述	数据表
IKW50N120CH7	INFINEON	获取价格	TRENCHSTOP™ IGBT7
IKW50N120CS7	INFINEON	获取价格	TRENCHSTOP™ IGBT7
IKW50N60DTP	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
IKW50N60DTPXKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247,
IKW50N60H3	INFINEON	获取价格	IGBT HighSpeed 3
IKW50N60H3FKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247, GREEN, PLA
IKW50N60T	INFINEON	获取价格	Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-p
IKW50N60T_08	INFINEON	获取价格	Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology
IKW50N60TA	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
IKW50N60TFKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247AC, GREEN, PL