Datasheet > IKW50N120CH7

IKW50N120CH7

更新时间： 2023-09-03 20:35:16

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
17页	1459K
描述
TRENCHSTOP™ IGBT7

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中文翻译

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数据手册

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IKW50N120CH7 数据手册

IKW50N120CH7

™

High speed 1200 V TRENCHSTOP IGBT 7 Technology

™

High speed 1200 V TRENCHSTOP IGBT 7 Technology co-packed with full rated current, soft-ommuꢀaꢀing,

ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode

Features

• V_CE= 1200 V

• I_C= 50 A

• Maximum junction temperature T_vjmax= 175°C

• Best-in-class high speed IGBT co-packed with full rated current, low Q_rrand soft-ommuꢀaꢀing

high speed diode

• Low saturation voltage V_CEsat= 1.7 V at T_vj= 25°C

• Optimized for high eﬀi-ien-y in high speed hard switching topologies (2-L inverter, 3-L NPC

T-type, ...)

• Easy paralleling capability due to positive temperature -oeﬀi-ienꢀ in V_CEsat

• Pb-free lead plating; RoHS compliant

• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/

Potential applications

• Industrial UPS

• EV-Charging

• String inverter

• Welding

Product validation

• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

Description

Type

Package

Marking

IKW50N120CH7

PG-TO247-3-STD-NN2.5

K50MCH7

Datasheet

www.infineon.com

Please read the sections "Important notice" and "Warnings" at the end of this document

Revision 1.10

2022-11-25

12 3 4 5 6 7...17

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