Datasheet > 晶体管 > IGBT> IGC109T120T6RH

IGC109T120T6RH

更新时间： 2024-11-05 12:20:03

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
5页	73K
描述
IGBT4 High Power Chip

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IGC109T120T6RH 数据手册

IGC109T120T6RH

IGBT4 High Power Chip

Features:

1200V Trench + Field stop technology

low V_CE(sat)

soft turn off

positive temperature coefficient

easy paralleling

This chip is used for:

medium / high power modules

Applications:

medium / high power drives

Chip Type

V_CE

I_Cn

Die Size

Package

IGC109T120T6RH 1200V 110A 7.48 x 14.61 mm²

sawn on foil

MECHANICAL PARAMETER

Raster size

7.48 x 14.61

Emitter pad size (incl. gate pad)

Gate pad size

4 x (2.761 x 6.458)

mm²

0.811 x 1.31

Area total / active

Thickness

109.3 / 82.6

140

150

µm

grd

Wafer size

Flat position

Max.possible chips per wafer

Passivation frontside

Pad metal

126

Photoimide

3200 nm AlSiCu

Ni Ag –system

Backside metal

Die bond

suitable for epoxy and soft solder die bonding

Electrically conductive glue or solder

Wire bond

Al, <500µm

Reject ink dot size

Æ 0.65mm ; max 1.2mm

Store in original container, in dry nitrogen,

< 6 month at an ambient temperature of 23°C

Recommended storage environment

Edited by INFINEON Technologies , AIM PMD D CID CLS , L7742A, Edition 1, 31.10.2007

12 3 4 5

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