型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IGC168T170S8RM | INFINEON |
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Insulated Gate Bipolar Transistor, 150A I(C), 1700V V(BR)CES, N-Channel, 13.38 X 12.58 MM, | |
IGC189T120T6RL | INFINEON |
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Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, 13.62 X 13.87 MM, DIE-3 | |
IGC189T120T6RLX1SA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, 13.62 X 13.87 MM, DIE-3 | |
IGC189T120T8RL | INFINEON |
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TRENCHSTOP? IGBT 结合独特 TRENCHSTOP? 和场终止技术,为行业树 | |
IGC18T120T6L | INFINEON |
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IGBT4 Low Power Chip | |
IGC18T120T8L | INFINEON |
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TRENCHSTOP? IGBT 结合独特 TRENCHSTOP? 和场终止技术,为行业树 | |
IGC18T120T8Q | INFINEON |
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英飞凌 HighSpeed 3 系列产品在 25kHz 到 70kHz 频率范围内在开关与 | |
IGC193T120T8RM | INFINEON |
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TRENCHSTOP? IGBT 结合独特 TRENCHSTOP? 和场终止技术,为行业树 | |
IGC20 | ETC |
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ASIC | |
IGC20030 | ETC |
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ASIC |