Datasheet > IGC109T120T8RM

IGC109T120T8RM

更新时间： 2024-11-05 21:21:11

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
5页	70K
描述
Insulated Gate Bipolar Transistor,

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技术参数
数据手册

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IGC109T120T8RM 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.6	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

IGC109T120T8RM 数据手册

IGC109T120T8RM

IGBT4 Medium Power Chip

Features:

Recommended for:



1200V Trench & Field stop technology

low switching losses

soft turn off

positive temperature coefficient

easy paralleling

Qualified according to JEDEC for target

applications



medium power modules

Applications:



medium power drives

1 )

Chip Type

V_CE

I_Cn

Die Size

7.48 x 14.61 mm²

Package

IGC109T120T8RM 1200V 110A

^{1 )}nominal collector current at Tc = 100°C, not subject to production test - verified by design/characterization

sawn on foil

Mechanical Parameters

Die size

7.48 x 14.61

See chip drawing

0.81 x 1.31

109.3

Emitter pad size (incl. gate pad)

Gate pad size

mm²

Area total

Thickness

120

µm

Wafer size

200

Max.possible chips per wafer

Passivation frontside

Pad metal

227

Photoimide

3200 nm AlSiCu

Backside metal

Die bond

Ni Ag –system

Electrically conductive epoxy glue and soft solder

Wire bond

Al, <500µm

Reject ink dot size

 0.65mm ; max 1.2mm

for original and

sealed MBB bags

Ambient atmosphere air, Temperature 17°C – 25°C,

< 6 month

Storage environment

Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas,

Humidity <25%RH, Temperature 17°C – 25°C, < 6 month

for open MBB bags

Edited by INFINEON Technologies, IFAT IPC ICD, L7742U, L7742O, Edition 1.2, 22.02.2013

12 3 4 5

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