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IGC11T120T8L PDF预览

IGC11T120T8L

更新时间: 2024-11-27 21:13:35
品牌 Logo 应用领域
英飞凌 - INFINEON
页数 文件大小 规格书
5页 70K
描述
Insulated Gate Bipolar Transistor

IGC11T120T8L 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.62
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

IGC11T120T8L 数据手册

 浏览型号IGC11T120T8L的Datasheet PDF文件第2页浏览型号IGC11T120T8L的Datasheet PDF文件第3页浏览型号IGC11T120T8L的Datasheet PDF文件第4页浏览型号IGC11T120T8L的Datasheet PDF文件第5页 
IGC11T120T8L  
IGBT4 Low Power Chip  
Features:  
Recommended for:  
1200V Trench & Field stop technology  
low switching losses  
positive temperature coefficient  
easy paralleling  
Qualified according to JEDEC for target  
applications  
low / medium power modules  
C
E
Applications:  
low / medium power drives  
G
1 )  
Chip Type  
VCE  
ICn  
Die Size  
3.48 x 3.19 mm2  
Package  
IGC11T120T8L  
1200V  
8A  
sawn on foil  
1 ) nominal collector current at Tc = 100°C, not subject to production test - verified by design/characterization  
Mechanical Parameters  
Die size  
3.48 x 3.19  
See chip drawing  
0.608 x 0.608  
11.1  
Emitter pad size (incl. gate pad)  
Gate pad size  
mm2  
Area total  
Thickness  
115  
µm  
Wafer size  
200  
mm  
Max.possible chips per wafer  
Passivation frontside  
Pad metal  
2408  
Photoimide  
3200 nm AlSiCu  
Ni Ag –system  
To achieve a reliable solder connection it is strongly  
recommended not to consume the Ni layer completely during  
production process  
Backside metal  
Die bond  
Electrically conductive epoxy glue and soft solder  
Wire bond  
Al, <500µm  
Reject ink dot size  
0.65mm ; max 1.2mm  
for original and  
sealed MBB bags  
Ambient atmosphere air, Temperature 17°C – 25°C,  
< 6 month  
Storage environment  
Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas,  
Humidity <25%RH, Temperature 17°C – 25°C, < 6 month  
for open MBB bags  
Edited by INFINEON Technologies, IFAT IPC TD VLS, L7613V, L7613P, Edition 1.2, 20.06.2013  

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