Datasheet > IGC10T65QE

IGC10T65QE

更新时间： 2024-11-06 09:32:59

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
4页	226K
描述
Insulated Gate Bipolar Transistor

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中文翻译

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数据手册

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IGC10T65QE 数据手册

IGC10T65QE

High Speed IGBT3 Chip

Features:

Recommended for:

discrete components and

modules



650V Trench & Field Stop technology

high speed switching series third

generation



low V_CE(sat)

low EMI

low turn-off losses

positive temperature coefficient

qualified according to JEDEC for target

applications

Applications:



uninterruptible power supplies

welding converters

converters with high switching

frequency

Chip Type

V_CE

I_Cn

Die Size

Package

IGC10T65QE

650V

20A

3.19 x 3.21mm²

sawn on foil

^{1 )}nominal collector current at Tc = 100°C, not subject to production test - verified by design/characterization

Mechanical Parameters

Die size

3.19 x 3.21

See chip drawing

0.361 x 0.513

10.24

Emitter pad size

Gate pad size

Area total

mm²

Thickness

µm

Wafer size

200

Max.possible chips per wafer

Passivation frontside

Pad metal

2693

Photoimide

3200 nm AlSiCu

Backside metal

Die bond

Ni Ag –system

Electrically conductive epoxy glue and soft solder

Wire bond

Al, <500µm

Reject ink dot size

 0.65mm ; max 1.2mm

for original and

sealed MBB bags

Ambient atmosphere air, Temperature 17°C – 25°C,

< 6 month

Storage environment

Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas,

Humidity <25%RH, Temperature 17°C – 25°C, < 6 month

for open MBB bags

Edited by INFINEON Technologies, IFAG IPC TD VLS, L7541E, Rev 1.0, 01.08.2012

12 3 4

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