Datasheet > HGT1S12N60A4DS

HGT1S12N60A4DS

更新时间： 2024-02-15 18:08:42

品牌	Logo	应用领域
罗彻斯特 - ROCHESTER		电动机控制栅瞄准线双极性晶体管
页数	文件大小	规格书
9页	854K
描述
54A, 600V, N-CHANNEL IGBT, TO-263AB

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技术参数
数据手册

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HGT1S12N60A4DS 技术参数

是否无铅：	不含铅	生命周期：	Not Recommended
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
HTS代码：	8541.29.00.95	Factory Lead Time：	1 week
风险等级：	5.14	其他特性：	LOW CONDUCTION LOSS
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	54 A
集电极-发射极最大电压：	600 V	配置：	SINGLE WITH BUILT-IN DIODE
JEDEC-95代码：	TO-263AB	JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	2
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	Tin (Sn)	端子形式：	GULL WING
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	30
晶体管应用：	POWER CONTROL	晶体管元件材料：	SILICON
标称断开时间 (toff)：	180 ns	标称接通时间 (ton)：	33 ns
Base Number Matches：	1

HGT1S12N60A4DS 数据手册

HGTG12N60A4D, HGTP12N60A4D,

HGT1S12N60A4DS

Data Sheet

December 2001

600V, SMPS Series N-Channel IGBT with

Anti-Parallel Hyperfast Diode

Features

• >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A

• 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A

The HGTG12N60A4D, HGTP12N60A4D and

HGT1S12N60A4DS are MOS gated high voltage switching

devices combining the best features of MOSFETs and

bipolar transistors. These devices have the high input

impedance of a MOSFET and the low on-state conduction

loss of a bipolar transistor. The much lower on-state voltage

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T = 125 C

• Low Conduction Loss

drop varies only moderately between 25 C and 150 C. The

IGBT used is the development type TA49335. The diode

used in anti-parallel is the development type TA49371.

• Temperature Compensating SABER™ Model

www.fairchildsermi.com

• Related Literature

This IGBT is ideal for many high voltage switching

applications operating at high frequencies where low

conduction losses are essential. This device has been

optimized for high frequency switch mode power supplies.

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards

Packaging

JEDEC TO-220AB ALTERNATE VERSION

Formerly Developmental Type TA49337.

COLLECTOR

(FLANGE)

Ordering Information

PART NUMBER

HGTG12N60A4D

HGTP12N60A4D

HGT1S12N60A4DS

PACKAGE

BRAND

12N60A4D

TO-247

TO-220AB

TO-263AB

12N60A4D

JEDEC TO-263AB

COLLECTOR

NOTE: When ordering, use the entire part number. Add the suffix 9A

to obtain the TO-263AB variant in tape and reel, e.g.

HGT1S12N60A4DS9A.

(FLANGE)

Symbol

JEDEC STYLE TO-247

COLLECTOR

(FLANGE)

Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B

123 4 5 6 7...9

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与HGT1S12N60A4DS相关器件

型号	品牌	描述	获取价格	数据表
HGT1S12N60A4DS_NL	FAIRCHILD	Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB, LEAD FREE	获取价格
HGT1S12N60A4DS9A	INTERSIL	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 54A I(C) \| TO-263AB	获取价格
HGT1S12N60A4DST	FAIRCHILD	Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB	获取价格
HGT1S12N60A4S	INTERSIL	600V, SMPS Series N-Channel IGBT	获取价格
HGT1S12N60A4S9A	FAIRCHILD	600V, SMPS Series N-Channel IGBTs	获取价格
HGT1S12N60B3DS	FAIRCHILD	27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode	获取价格

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