Datasheet > HGT1S12N60A4DS

HGT1S12N60A4DS

更新时间： 2024-01-06 02:19:50

品牌	Logo	应用领域
罗彻斯特 - ROCHESTER		电动机控制栅瞄准线双极性晶体管
页数	文件大小	规格书
9页	854K
描述
54A, 600V, N-CHANNEL IGBT, TO-263AB

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

HGT1S12N60A4DS 技术参数

是否无铅：	不含铅	生命周期：	Not Recommended
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
HTS代码：	8541.29.00.95	Factory Lead Time：	1 week
风险等级：	5.14	其他特性：	LOW CONDUCTION LOSS
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	54 A
集电极-发射极最大电压：	600 V	配置：	SINGLE WITH BUILT-IN DIODE
JEDEC-95代码：	TO-263AB	JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	2
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	Tin (Sn)	端子形式：	GULL WING
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	30
晶体管应用：	POWER CONTROL	晶体管元件材料：	SILICON
标称断开时间 (toff)：	180 ns	标称接通时间 (ton)：	33 ns
Base Number Matches：	1

HGT1S12N60A4DS 数据手册

HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS

Handling Precautions for IGBTs

Operating Frequency Information

Insulated Gate Bipolar Transistors are susceptible to

gate-insulation damage by the electrostatic discharge of

energy through the devices. When handling these devices,

care should be exercised to assure that the static charge

built in the handler’s body capacitance is not discharged

through the device. With proper handling and application

procedures, however, IGBTs are currently being extensively

used in production by numerous equipment manufacturers in

military, industrial and consumer applications, with virtually

no damage problems due to electrostatic discharge. IGBTs

can be handled safely if the following basic precautions are

taken:

Operating frequency information for a typical device

(Figure 3) is presented as a guide for estimating device

performance for a specific application. Other typical

frequency vs collector current (I ) plots are possible using

the information shown for a typical unit in Figures 5, 6, 7, 8, 9

and 11. The operating frequency plot (Figure 3) of a typical

device shows f

or f ; whichever is smaller at each

MAX1

MAX2

point. The information is based on measurements of a

typical device and is bounded by the maximum rated

junction temperature.

is defined by f

= 0.05/(t

MAX1

+ t ).

d(OFF)I d(ON)I

MAX1

Deadtime (the denominator) has been arbitrarily held to 10%

of the on-state time for a 50% duty factor. Other definitions

1. Prior to assembly into a circuit, all leads should be kept

shorted together either by the use of metal shorting

springs or by the insertion into conductive material such

as “ECCOSORBD™ LD26” or equivalent.

are possible. t

and t are defined in Figure 25.

d(OFF)I

d(ON)I

Device turn-off delay can establish an additional frequency

limiting condition for an application other than T . t

JM d(OFF)I

2. When devices are removed by hand from their carriers,

the hand being used should be grounded by any suitable

means - for example, with a metallic wristband.

is important when controlling output ripple under a lightly

loaded condition.

is defined by f

MAX2

= (P - P )/(E

OFF

+ E ). The

ON2

MAX2

3. Tips of soldering irons should be grounded.

allowable dissipation (P ) is defined by P = (T - T )/R

JM θJC

4. Devices should never be inserted into or removed from

circuits with power on.

The sum of device switching and conduction losses must

not exceed P . A 50% duty factor was used (Figure 3) and

5. Gate Voltage Rating - Never exceed the gate-voltage

the conduction losses (P ) are approximated by

rating of V

. Exceeding the rated V can result in

GEM

= (V

x I )/2.

permanent damage to the oxide layer in the gate region.

and E

OFF

are defined in the switching waveforms

is the integral of the

6. Gate Termination - The gates of these devices are

essentially capacitors. Circuits that leave the gate open-

circuited or floating should be avoided. These conditions

can result in turn-on of the device due to voltage buildup

on the input capacitor due to leakage currents or pickup.

ON2

shown in Figure 25. E

ON2

instantaneous power loss (I

x V ) during turn-on and

is the integral of the instantaneous power loss

OFF

x V ) during turn-off. All tail losses are included in the

7. Gate Protection - These devices do not have an internal

monolithic Zener diode from gate to emitter. If gate

protection is required an external Zener is recommended.

calculation for E

; i.e., the collector current equals zero

OFF

= 0).

HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B

1...6 7 89

下载PDF

与HGT1S12N60A4DS相关器件

型号	品牌	描述	获取价格	数据表
HGT1S12N60A4DS_NL	FAIRCHILD	Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB, LEAD FREE	获取价格
HGT1S12N60A4DS9A	INTERSIL	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 54A I(C) \| TO-263AB	获取价格
HGT1S12N60A4DST	FAIRCHILD	Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB	获取价格
HGT1S12N60A4S	INTERSIL	600V, SMPS Series N-Channel IGBT	获取价格
HGT1S12N60A4S9A	FAIRCHILD	600V, SMPS Series N-Channel IGBTs	获取价格
HGT1S12N60B3DS	FAIRCHILD	27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode	获取价格

与HGT1S12N60A4DS相关文章

STM32H743技术深度剖析与应用案例探索
2024-05-30

15
LM321中文资料解析：引脚功能介绍、技术特点、技术特性分析
2024-05-30

15
74HC14芯片资料介绍：性能特性分析、引脚介绍
2024-05-30

13
LM1875芯片手册：功放参数分析、引脚说明、电路设计要点
2024-05-30

10

产品中心

服务支持

精选活动

关于我们

帮助中心

HGT1S12N60A4DS

HGT1S12N60A4DS 技术参数

HGT1S12N60A4DS 数据手册

与HGT1S12N60A4DS相关器件

与HGT1S12N60A4DS相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

HGT1S12N60A4DS

HGT1S12N60A4DS 技术参数

HGT1S12N60A4DS 数据手册

与HGT1S12N60A4DS相关器件

与HGT1S12N60A4DS相关文章

您还可以找

您在本页遇到什么问题？