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H5MS5122DFR-K3M PDF预览

H5MS5122DFR-K3M

更新时间: 2024-02-01 06:35:23
品牌 Logo 应用领域
海力士 - HYNIX 时钟动态存储器双倍数据速率内存集成电路
页数 文件大小 规格书
62页 2311K
描述
DDR DRAM, 16MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN AND LEAD FREE, FBGA-90

H5MS5122DFR-K3M 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:BGA
包装说明:VFBGA, BGA90,9X15,32针数:90
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.28风险等级:5.41
访问模式:FOUR BANK PAGE BURST最长访问时间:6 ns
其他特性:AUTO/SELF REFRESH最大时钟频率 (fCLK):133 MHz
I/O 类型:COMMON交错的突发长度:2,4,8
JESD-30 代码:R-PBGA-B90JESD-609代码:e1
长度:13 mm内存密度:536870912 bit
内存集成电路类型:DDR DRAM内存宽度:32
功能数量:1端口数量:1
端子数量:90字数:16777216 words
字数代码:16000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-30 °C
组织:16MX32输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:VFBGA
封装等效代码:BGA90,9X15,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH峰值回流温度(摄氏度):260
电源:1.8 V认证状态:Not Qualified
刷新周期:8192座面最大高度:1 mm
自我刷新:YES连续突发长度:2,4,8
最大待机电流:0.0003 A子类别:DRAMs
最大压摆率:0.1 mA最大供电电压 (Vsup):1.95 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子面层:Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:20
宽度:8 mmBase Number Matches:1

H5MS5122DFR-K3M 数据手册

 浏览型号H5MS5122DFR-K3M的Datasheet PDF文件第2页浏览型号H5MS5122DFR-K3M的Datasheet PDF文件第3页浏览型号H5MS5122DFR-K3M的Datasheet PDF文件第4页浏览型号H5MS5122DFR-K3M的Datasheet PDF文件第5页浏览型号H5MS5122DFR-K3M的Datasheet PDF文件第6页浏览型号H5MS5122DFR-K3M的Datasheet PDF文件第7页 
512Mbit MOBILE DDR SDRAM based on 4M x 4Bank x32 I/O  
Specification of  
512Mbꢀ(16Mx32bit)ꢀMobileꢀDDRꢀSDRAM  
Memory Cell Array  
ꢀꢁꢀOrganizedꢀasꢀ4banksꢀofꢀ4,194,304ꢀx32  
Thisꢀdocumentꢀisꢀaꢀgeneralꢀproductꢀdescriptionꢀandꢀisꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.ꢀHynixꢀdoesꢀnotꢀassumeꢀanyꢀresponsibilityꢀforꢀ  
useꢀofꢀcircuitsꢀdescribed.ꢀNoꢀpatentꢀlicensesꢀareꢀimplied.  
Rev 1.2 / Jul. 2008  
1

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