Datasheet > GT40G121

GT40G121

更新时间： 2024-11-17 21:55:43

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管双极性晶体管栅
页数	文件大小	规格书
5页	145K
描述
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

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中文翻译

获取价格

技术参数
数据手册

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GT40G121 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
零件包装代码：	TO-220AB	包装说明：	LEAD FREE, 2-10P1C, 3 PIN
针数：	3	Reach Compliance Code：	unknown
风险等级：	5.25	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	Base Number Matches：	1

GT40G121 数据手册

GT40G121

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT40G121

The 4th Generation

Current Resonance Inverter Switching Applications

Unit: mm

Enhancement-mode

High speed: t = 0.30 µs (typ.) (I = 60 A)

Low saturation voltage: V

= 1.8 V (typ.) (I = 60 A)

CE (sat)

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-emitter voltage

Gate-emitter voltage

400

±25

CES

GES

Collector current

1 ms

100

Collector power dissipation (Tc = 25°C)

Junction temperature

100

°C

150

JEDEC

TO-220AB

―

Storage temperature range

-55~150

stg

JEITA

TOSHIBA

Weight: 2 g (typ.)

2-10P1C

Electrical Characteristics (Ta = 25°C)

Characteristics

Gate leakage current

Symbol

Test Condition

Min

Typ.

Max

Unit

= ±25 V, V = 0

±500

1.0

6.0

2.5

GES

Collector cut-off current

= 400 V, V

= 0

CES

Gate-emitter cut-off voltage

Collector-emitter saturation voltage

Input capacitance

= 60 mA, V = 5 V

3.0

GE (OFF)

= 60 A, V

= 15 V

1.8

3900

CE (sat)

ies

= 10 V, V = 0, f = 1 MHz

Rise time

0.33

0.43

39 W

Turn-on time

Switching time

15 V

Fall time

Turn-off time

0.30

0.54

0.40

200 V

-15 V

off

Thermal resistance

1.25

°C/W

th(j-c)

2003-03-18

12 3 4 5

中文翻译

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