Datasheet > GT40J121

GT40J121

更新时间： 2024-11-18 12:36:03

品牌	Logo	应用领域
东芝 - TOSHIBA		双极性晶体管
页数	文件大小	规格书
8页	222K
描述
Discrete IGBTs Silicon N-Channel IGBT

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GT40J121 数据手册

GT40J121

Discrete IGBTs Silicon N-Channel IGBT

GT40J121

1. Applications

•

Dedicated to Current-Resonant Inverter Switching Applications

•

Dedicated to Partial-Switching Power Factor Correction (PFC) Applications

Note: The product(s) described herein should not be used for any other application.

2. Features

(1) Sixth generation

(2) Enhancement mode

(3) High-speed switching: tf = 0.20 µs (typ.) (IC = 40 A)

(4) Low saturation voltage: VCE(sat) = 1.45 V (typ.) (IC = 40 A)

(5) TO-3P(N)IS (Toshiba package name)

3. Packaging and Internal Circuit

1: Gate

2: Collector

3: Emitter

TO-3P(N)IS

2011-06-30

Rev.1.0

12 3 4 5 6 7 8

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型号	品牌	获取价格	描述	数据表
GT40J321	TOSHIBA	获取价格	TRANSISTOR 40 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT, 2-16C1C, 3 PIN, Insulated Gate BIP
GT40J322	TOSHIBA	获取价格	TRANSISTOR 40 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT, 2-16C1C, 3 PIN, Insulated Gate BIP
GT40J325	TOSHIBA	获取价格	TRANSISTOR 40 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT, 2-16F1S, TO-3P(N)IS, 3 PIN, Insula
GT40M101	TOSHIBA	获取价格	N CHANNEL IGBT (HIGH POWER SWITCHING APPLICATIONS)
GT40M301	TOSHIBA	获取价格	N CHANNEL TMOS TYPE(HIGH POWER SWITHCING APPLICATIONS)
GT40PI120T5H	SILVERMICRO	获取价格	PIM IGBT-1200V
GT40Q321	TOSHIBA	获取价格	Voltage Resonance Inverter Switching Application
GT40Q321_06	TOSHIBA	获取价格	Silicon N Channel IEGT Voltage Resonance Inverter Switching Application
GT40Q322	TOSHIBA	获取价格	Voltage Resonance Inverter Switching Application
GT40Q323	TOSHIBA	获取价格	Silicon N Channel IGBT Voltage Resonance Inverter Switching Application