Datasheet > GT40QR21

GT40QR21

更新时间： 2024-11-18 12:36:03

品牌	Logo	应用领域
东芝 - TOSHIBA		双极性晶体管
页数	文件大小	规格书
10页	230K
描述
Discrete IGBTs Silicon N-Channel IGBT

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GT40QR21 数据手册

GT40QR21

Discrete IGBTs Silicon N-Channel IGBT

GT40QR21

1. Applications

•

Dedicated to Voltage-Resonant Inverter Switching Applications

Note: The product(s) described herein should not be used for any other application.

2. Features

(1) 6.5th generation

(2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip.

(3) Enhancement mode

(4) High-speed switching

IGBT : tf = 0.20 µs (typ.) (IC = 40 A)

FWD : trr = 0.60 µs (typ.) (IF = 15 A)

(5) Low saturation voltage : VCE(sat) = 1.9 V (typ.) (IC = 40 A)

(6) High junction temperature : Tj = 175 (max)

3. Packaging and Internal Circuit

1: Gate

2: Collector

3: Emitter

TO-3P(N)

2011-06-06

Rev.1.0

12 3 4 5 6 7...10

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