Datasheet > GT40T301_06

GT40T301_06

更新时间： 2024-11-18 03:40:03

品牌	Logo	应用领域
东芝 - TOSHIBA		开关双极性晶体管
页数	文件大小	规格书
6页	166K
描述
Silicon N Channel IGBT Parallel Resonance Inverter Switching Applications

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GT40T301_06 数据手册

GT40T301

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT40T301

Parallel Resonance Inverter Switching Applications

Unit: mm

•

FRD included between emitter and collector

Enhancement mode type

High speed IGBT : t = 0.25 μs (typ.) (I = 40 A)

FRD : t = 0.7 μs (typ.) (di/dt = −20 A/μs)

•

Low saturation voltage: V = 3.7 V (typ.) (I = 40 A)

CE (sat) C

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-emitter voltage

Gate-emitter voltage

1500

±25

CES

GES

1 ms

Collector current

ECF

Emitter-collector forward

current

JEDEC

JEITA

―

1 ms

ECPF

Collector power dissipation (Tc =

25°C)

200

TOSHIBA

2-21F2C

Junction temperature

150

°C

Weight: 9.75 g (typ.)

Storage temperature range

stg

−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Equivalent Circuit

Marking

Collector

Emitter

Part No. (or abbreviation code)

Lot No.

TOSHIBA

GT40T301

Gate

JAPAN

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2006-11-01

12 3 4 5 6

中文翻译

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